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FGA30N65SMD

FGA30N65SMD
Mfr. #:
FGA30N65SMD
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 650V 30A FS Planar Gen2 IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGA30N65SMD Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGA30N65SMD Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Gewichtseinheit
0.225789 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-3P-3, SC-65-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-3P
Aufbau
Single
Leistung max
300W
Reverse-Recovery-Time-trr
35ns
Strom-Kollektor-Ic-Max
60A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
Feldstopp
Strom-Kollektor-gepulster-Icm
90A
Vce-on-Max-Vge-Ic
2.5V @ 15V, 30A
Schaltenergie
716μJ (on), 208μJ (off)
Gate-Gebühr
87nC
Td-ein-aus-25°C
14ns/102ns
Testbedingung
400V, 30A, 6 Ohm, 15V
Pd-Verlustleistung
300 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
2.29 V
Kontinuierlicher Kollektorstrom-bei-25-C
60 A
Gate-Emitter-Leckstrom
400 nA
Maximale Gate-Emitter-Spannung
+/- 20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
30 A
Tags
FGA30N6, FGA30N, FGA30, FGA3, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
Teil # Mfg. Beschreibung Aktie Preis
FGA30N65SMD
DISTI # FGA30N65SMD-ND		ON SemiconductorIGBT 650V 60A 300W TO3P-3
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$2.8353
FGA30N65SMD
DISTI # FGA30N65SMD		ON SemiconductorTrans IGBT Chip N-CH 650V 60A 3-Pin TO-3P - Rail/Tube (Alt: FGA30N65SMD)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.7900
  • 900:$1.7900
  • 1800:$1.6900
  • 2700:$1.6900
  • 4500:$1.6900
FGA30N65SMD
DISTI # FGA30N65SMD		ON SemiconductorTrans IGBT Chip N-CH 650V 60A 3-Pin TO-3P - Bulk (Alt: FGA30N65SMD)
Min Qty: 162
Container: Bulk		Americas - 0
  • 162:$1.9900
  • 164:$1.9900
  • 326:$1.8900
  • 810:$1.8900
  • 1620:$1.8900
FGA30N65SMD
DISTI # 512-FGA30N65SMD		ON SemiconductorIGBT Transistors FS2PIGBT TO3PN 30A 650V
RoHS: Compliant		315
  • 1:$3.6900
  • 10:$3.1300
  • 100:$2.7200
  • 250:$2.5800
  • 500:$2.3100
  • 1000:$1.9500
  • 2500:$1.8500
FGA30N65SMDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant		10800
  • 1000:$2.0400
  • 500:$2.1500
  • 100:$2.2400
  • 25:$2.3300
  • 1:$2.5100
FGA30N65SMD
DISTI # 8648770P		ON SemiconductorIGBT 650V 30A FIELD STOP TO3PN, TU412
  • 20:£1.3100
Bild Teil # Beschreibung
FGA30N60LSDTU

Mfr.#: FGA30N60LSDTU

OMO.#: OMO-FGA30N60LSDTU

 IGBT Transistors 30A 600V N-Ch Planar
FGA30N120FTDTU

Mfr.#: FGA30N120FTDTU

OMO.#: OMO-FGA30N120FTDTU

 IGBT Transistors 1200V 30A FS
FGA30N65SMD

Mfr.#: FGA30N65SMD

OMO.#: OMO-FGA30N65SMD

 IGBT Transistors FS2PIGBT TO3PN 30A 650V
FGA30T65SHD

Mfr.#: FGA30T65SHD

OMO.#: OMO-FGA30T65SHD

 IGBT Transistors FS3TIGBT TO3PN 30A 650V
FGA30S120P--

Mfr.#: FGA30S120P--

OMO.#: OMO-FGA30S120P---1190

 Neu und Original
FGA3060ADF

Mfr.#: FGA3060ADF

OMO.#: OMO-FGA3060ADF-ON-SEMICONDUCTOR

 IGBT 600V 60A 176W TO-3PN
FGA30N120A

Mfr.#: FGA30N120A

OMO.#: OMO-FGA30N120A-1190

 Neu und Original
FGA30N120AND

Mfr.#: FGA30N120AND

OMO.#: OMO-FGA30N120AND-1190

 Neu und Original
FGA30N120FTD

Mfr.#: FGA30N120FTD

OMO.#: OMO-FGA30N120FTD-1190

 Neu und Original
FGA30T65UPDT

Mfr.#: FGA30T65UPDT

OMO.#: OMO-FGA30T65UPDT-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von FGA30N65SMD dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,54 $
2,54 $
10
2,41 $
24,08 $
100
2,28 $
228,15 $
500
2,15 $
1 077,40 $
1000
2,03 $
2 028,00 $
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