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IXA45IF1200HB

IXA45IF1200HB
Mfr. #:
IXA45IF1200HB
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors N-Channel: Power MOSFET w/Fast Diode
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXA45IF1200HB Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IXA45IF1200HB Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
IGBTs - Single
Serie
IXA45IF1200HB
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Handelsname
XPT
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247AD (HB)
Aufbau
Single
Leistung max
325W
Reverse-Recovery-Time-trr
350ns
Strom-Kollektor-Ic-Max
78A
Spannungs-Kollektor-Emitter-Breakdown-Max
1200V
IGBT-Typ
PT
Strom-Kollektor-gepulster-Icm
-
Vce-on-Max-Vge-Ic
2.1V @ 15V, 35A
Schaltenergie
3.8mJ (on), 4.1mJ (off)
Gate-Gebühr
106nC
Td-ein-aus-25°C
-
Testbedingung
600V, 35A, 27 Ohm, 15V
Pd-Verlustleistung
325 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
1200 V
Kollektor-Emitter-Sättigungsspannung
1.8 V
Kontinuierlicher Kollektorstrom-bei-25-C
78 A
Gate-Emitter-Leckstrom
500 nA
Maximale Gate-Emitter-Spannung
20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
45 A
Tags
IXA45, IXA4, IXA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, IXYS IXA45IF1200HB IGBT
***i-Key
IGBT 1200V 78A 325W TO247
***ukat
1200V 78A 325W TO247AD
***nell
IGBT,1200V,74A,TO-247; DC Collector Current:78A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Max:325W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
***ark
XPT IGBT COPACK, 1200V, 78A, TO-247; DC Collector Current:78A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:325W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150�CRoHS Compliant: Yes
***ment14 APAC
IGBT,1200V,74A,TO-247; Transistor Type:IGBT; DC Collector Current:78A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:325W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:-; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:325W
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXA45IF1200HB
DISTI # IXA45IF1200HB-ND		IXYS CorporationIGBT 1200V 78A 325W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$9.4493
IXA45IF1200HB
DISTI # 83R9963		IXYS CorporationXPT IGBT COPACK, 1200V, 78A, TO-247,DC Collector Current:78A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:325W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°CRoHS Compliant: Yes0
    IXA45IF1200HB
    DISTI # 747-IXA45IF1200HB    		IXYS CorporationIGBT Transistors N-Channel: Power MOSFET w/Fast Diode
    RoHS: Compliant    		88
    • 1:$11.5200
    • 10:$10.3700
    • 25:$9.4500
    • 50:$8.6300
    • 100:$8.5300
    • 250:$7.7700
    • 500:$7.1500
    • 1000:$6.2200
    IXA45IF1200HB
    DISTI # 8080262P    		IXYS CorporationIGBT N-CH 1200V 78A 1.8V XPT TO247AD, TU60
    • 250:£5.6100
    • 50:£6.7500
    • 20:£6.9200
    • 10:£7.0900
    IXA45IF1200HB
    DISTI # IXA45IF1200HB    		IXYS Corporation1200V 78A 325W TO247AD
    RoHS: Compliant    		36
    • 1:€9.1000
    • 5:€6.1000
    • 30:€5.1000
    • 60:€4.9000
    IXA45IF1200HB  3
      IXA45IF1200HB
      DISTI # 1829724      		IXYS CorporationIGBT,1200V,74A,TO-247
      RoHS: Compliant      		0
      • 1000:$9.3700
      • 500:$10.7800
      • 250:$11.7100
      • 100:$12.8500
      • 50:$13.0100
      • 25:$14.2400
      • 10:$15.6300
      • 1:$17.3600
      IXA45IF1200HB
      DISTI # 1829724      		IXYS CorporationIGBT,1200V,74A,TO-247
      RoHS: Compliant      		0
      • 100:£6.6400
      • 50:£6.7200
      • 10:£7.2200
      • 5:£8.9700
      • 1:£9.5200
      Bild Teil # Beschreibung
      IXA45IF1200HB

      Mfr.#: IXA45IF1200HB

      OMO.#: OMO-IXA45IF1200HB

      		 IGBT Transistors N-Channel: Power MOSFET w/Fast Diode
      IXA45IF1200HB

      Mfr.#: IXA45IF1200HB

      OMO.#: OMO-IXA45IF1200HB-IXYS-CORPORATION

      		 IGBT Transistors N-Channel: Power MOSFET w/Fast Diode
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von IXA45IF1200HB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      8,35 $
      8,35 $
      10
      7,93 $
      79,35 $
      100
      7,52 $
      751,70 $
      500
      7,10 $
      3 549,70 $
      1000
      6,68 $
      6 681,80 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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