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NGTB30N60L2WG

NGTB30N60L2WG
Mfr. #:
NGTB30N60L2WG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 600V 30A IGBT TO-247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTB30N60L2WG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
NGTB30N60L2WG Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
ON Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247-3
Leistung max
225W
Reverse-Recovery-Time-trr
70ns
Strom-Kollektor-Ic-Max
100A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
-
Strom-Kollektor-gepulster-Icm
60A
Vce-on-Max-Vge-Ic
1.6V @ 15V, 30A
Schaltenergie
310μJ (on), 1.14mJ (off)
Gate-Gebühr
166nC
Td-ein-aus-25°C
100ns/390ns
Testbedingung
300V, 30A, 30 Ohm, 15V
Tags
NGTB30N60, NGTB30N6, NGTB30, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
Teil # Mfg. Beschreibung Aktie Preis
NGTB30N60L2WG
DISTI # NGTB30N60L2WG-ND		ON SemiconductorIGBT 600V 30A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1020:$2.5431
  • 510:$3.0154
  • 120:$3.5422
  • 30:$4.0870
  • 1:$4.8100
NGTB30N60L2WG
DISTI # NGTB30N60L2WG		ON SemiconductorTrans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB30N60L2WG)
RoHS: Compliant
Min Qty: 180
Container: Tube		Americas - 0
  • 180:$2.1900
  • 240:$2.1900
  • 420:$2.1900
  • 900:$2.0900
  • 1800:$2.0900
NGTB30N60L2WG
DISTI # 31AC0874		ON SemiconductorTRANSISTOR, IGBT, N-CH, 600V, 30A, TO247,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):1.4V,Power Dissipation Pd:225mW,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247,No. of , RoHS Compliant: Yes65
  • 1:$4.5800
  • 10:$3.9000
  • 25:$3.7300
  • 50:$3.5500
  • 100:$3.3800
  • 250:$3.2100
  • 500:$2.8800
NGTB30N60L2WG
DISTI # 863-NGTB30N60L2WG		ON SemiconductorIGBT Transistors 600V 30A IGBT TO-247
RoHS: Compliant		550
  • 1:$4.5800
  • 10:$3.9000
  • 100:$3.3800
  • 250:$3.2100
  • 500:$2.8800
  • 1000:$2.4300
  • 2500:$2.3100
NGTB30N60L2WG
DISTI # 2774810		ON SemiconductorTRANSISTOR, IGBT, N-CH, 600V, 30A, TO247
RoHS: Compliant		65
  • 1:$7.1600
  • 10:$6.2400
  • 100:$5.4100
  • 250:$4.8700
  • 500:$4.2700
  • 1000:$3.8600
NGTB30N60L2WG
DISTI # 2774810		ON SemiconductorTRANSISTOR, IGBT, N-CH, 600V, 30A, TO247
RoHS: Compliant		65
  • 1:£3.8600
  • 10:£2.9500
  • 100:£2.5500
  • 250:£2.4300
  • 500:£2.1800
Bild Teil # Beschreibung
NGTB30N135IHR1WG

Mfr.#: NGTB30N135IHR1WG

OMO.#: OMO-NGTB30N135IHR1WG

 IGBT Transistors 1350V/30A IGBT FSII
NGTB30N120FL2WG

Mfr.#: NGTB30N120FL2WG

OMO.#: OMO-NGTB30N120FL2WG

 IGBT Transistors 1200V/30A FAST IGBT FSII
NGTB30N60SWG

Mfr.#: NGTB30N60SWG

OMO.#: OMO-NGTB30N60SWG

 IGBT Transistors 600V/30A IGBT FSI TO-247
NGTB30N120IHRWG

Mfr.#: NGTB30N120IHRWG

OMO.#: OMO-NGTB30N120IHRWG-ON-SEMICONDUCTOR

 IGBT Transistors 1200V/30A RC IGBT FSII
NGTB30N60L2WG

Mfr.#: NGTB30N60L2WG

OMO.#: OMO-NGTB30N60L2WG-ON-SEMICONDUCTOR

 IGBT Transistors 600V 30A IGBT TO-247
NGTB30N120L2WG

Mfr.#: NGTB30N120L2WG

OMO.#: OMO-NGTB30N120L2WG-ON-SEMICONDUCTOR

 IGBT Transistors 1200V/30A LOW VCE SAT FSII
NGTB30N135IHRWG

Mfr.#: NGTB30N135IHRWG

OMO.#: OMO-NGTB30N135IHRWG-ON-SEMICONDUCTOR

 IGBT Transistors 1350V/30A IGBT FSII TO-24
NGTB30N60FWG

Mfr.#: NGTB30N60FWG

OMO.#: OMO-NGTB30N60FWG-ON-SEMICONDUCTOR

 IGBT Transistors 600V/30A IGBT NPT TO-247
NGTB30N60SWG

Mfr.#: NGTB30N60SWG

OMO.#: OMO-NGTB30N60SWG-ON-SEMICONDUCTOR

 IGBT Transistors 600V/30A IGBT FSI TO-247
NGTB30N120IHSWG

Mfr.#: NGTB30N120IHSWG

OMO.#: OMO-NGTB30N120IHSWG-ON-SEMICONDUCTOR

 IGBT Transistors 1200/30A IGBT LPT TO-247
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von NGTB30N60L2WG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,14 $
3,14 $
10
2,98 $
29,78 $
100
2,82 $
282,15 $
500
2,66 $
1 332,40 $
1000
2,51 $
2 508,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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