IXFX40N90P

IXFX40N90P
Mfr. #:
IXFX40N90P
Hersteller:
Littelfuse
Beschreibung:
MOSFET Polar HiperFET Power MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFX40N90P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFX40N90P DatasheetIXFX40N90P Datasheet (P4)
ECAD Model:
Mehr Informationen:
IXFX40N90P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
900 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
210 mOhms
Vgs th - Gate-Source-Schwellenspannung:
6.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
230 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
960 W
Aufbau:
Single
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
IXFX40N90
Transistortyp:
1 N-Channel
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
30 S
Abfallzeit:
46 ns
Produktart:
MOSFET
Anstiegszeit:
50 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
77 ns
Typische Einschaltverzögerungszeit:
53 ns
Gewichtseinheit:
0.056438 oz
Tags
IXFX4, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 900V 40A 960W Through Hole PLUS247™-3 Mosfet
***ical
Trans MOSFET N-CH 900V 40A 3-Pin(3+Tab) PLUS 247
***th Star Micro
MOSFET N-CH PLUS247
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFX40N90P
DISTI # IXFX40N90P-ND
IXYS CorporationMOSFET N-CH PLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$16.9277
IXFX40N90P
DISTI # 747-IXFX40N90P
IXYS CorporationMOSFET Polar HiperFET Power MOSFET
RoHS: Compliant
348
  • 1:$23.1500
  • 10:$21.0500
  • 25:$19.4600
  • 50:$17.9100
  • 100:$17.4700
  • 250:$16.0100
  • 500:$14.5300
IXFX40N90P
DISTI # XSFP00000164986
IXYS Corporation 
RoHS: Compliant
90
  • 90:$16.7800
  • 30:$20.6500
Bild Teil # Beschreibung
CD1408-FU1800

Mfr.#: CD1408-FU1800

OMO.#: OMO-CD1408-FU1800

Rectifiers RECTIFIER DIODE SMD 800VOLT
SISS98DN-T1-GE3

Mfr.#: SISS98DN-T1-GE3

OMO.#: OMO-SISS98DN-T1-GE3

MOSFET 200V Vds 20V Vgs PowerPAK 1212-8S
FDL100N50F

Mfr.#: FDL100N50F

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TOP224GN-TL

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AC/DC Converters 20W 85-265 VAC 30W100/115/230 VAC
SISA88DN-T1-GE3

Mfr.#: SISA88DN-T1-GE3

OMO.#: OMO-SISA88DN-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
IXFB90N85X

Mfr.#: IXFB90N85X

OMO.#: OMO-IXFB90N85X

MOSFET 850V/90A Ultra Junction X-Class
IXFX120N65X2

Mfr.#: IXFX120N65X2

OMO.#: OMO-IXFX120N65X2

MOSFET MOSFET 650V/120A Ultra Junction X2
IXTH40N50L2

Mfr.#: IXTH40N50L2

OMO.#: OMO-IXTH40N50L2

MOSFET 40 Amps 500V
LZP-W0MD00-0000

Mfr.#: LZP-W0MD00-0000

OMO.#: OMO-LZP-W0MD00-0000

High Power LEDs - Multi-Color RGBW Power on 4 channel MCPCB
SISS98DN-T1-GE3

Mfr.#: SISS98DN-T1-GE3

OMO.#: OMO-SISS98DN-T1-GE3-VISHAY

MOSFET N-CH 200V 14.1A 1212-8
Verfügbarkeit
Aktie:
83
Auf Bestellung:
2066
Menge eingeben:
Der aktuelle Preis von IXFX40N90P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
23,15 $
23,15 $
10
21,05 $
210,50 $
25
19,46 $
486,50 $
50
17,91 $
895,50 $
100
17,47 $
1 747,00 $
250
16,01 $
4 002,50 $
500
14,53 $
7 265,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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