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IXFB90N85X

IXFB90N85X
Mfr. #:
IXFB90N85X
Hersteller:
Littelfuse
Beschreibung:
MOSFET 850V/90A Ultra Junction X-Class
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFB90N85X Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFB90N85X DatasheetIXFB90N85X Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFB90N85X Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
PLUS-264-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
850 V
Id - Kontinuierlicher Drainstrom:
90 A
Rds On - Drain-Source-Widerstand:
41 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
340 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.785 kW
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
X-Klasse
Transistortyp:
1 N-Channel
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
37 S
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
25
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
126 ns
Typische Einschaltverzögerungszeit:
50 ns
Tags
IXFB, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***v
    M***v
    RU

    Everything corresponds to the description, it came quickly.

    2019-01-20
    V***v
    V***v
    RU

    Dolgl was coming

    2019-04-10
X-Class 850V - 1000V Power MOSFETs with HiPerFET™
IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Teil # Mfg. Beschreibung Aktie Preis
IXFB90N85X
DISTI # V36:1790_17563832		IXYS CorporationTrans MOSFET N-CH 850V 90A 3-Pin(3+Tab) PLUS 2640
    IXFB90N85X
    DISTI # IXFB90N85X-ND    		IXYS Corporation850V/90A ULT JUNC X-C HIPERFET P
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		141In Stock
    • 100:$22.9100
    • 25:$24.6500
    • 10:$26.8250
    • 1:$29.0000
    IXFB90N85X
    DISTI # 747-IXFB90N85X    		IXYS CorporationMOSFET 850V/90A Ultra Junction X-Class
    RoHS: Compliant    		553
    • 1:$29.0000
    • 5:$27.5500
    • 10:$26.8300
    • 25:$24.6500
    • 50:$23.6000
    • 100:$22.9100
    • 250:$21.0200
    IXFB90N85X
    DISTI # 1464246    		IXYS CorporationULTRA JUNCTION MOSFET 90A 850V PLUS264, TU37
    • 500:£15.2310
    • 250:£15.9850
    • 100:£16.6060
    • 25:£18.6820
    IXFB90N85X
    DISTI # IXFB90N85X    		IXYS CorporationTransistor: N-MOSFET,X-Class,unipolar,850V,90A,1785W,PLUS264™54
    • 25:$24.1400
    • 5:$27.3300
    • 1:$30.4100
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    Verfügbarkeit
    Aktie:
    551
    Auf Bestellung:
    2534
    Menge eingeben:
    Der aktuelle Preis von IXFB90N85X dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    29,00 $
    29,00 $
    5
    27,55 $
    137,75 $
    10
    26,83 $
    268,30 $
    25
    24,65 $
    616,25 $
    50
    23,60 $
    1 180,00 $
    100
    22,91 $
    2 291,00 $
    250
    21,02 $
    5 255,00 $
    500
    20,01 $
    10 005,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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