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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGTD3N60C3S9A DISTI # HGTD3N60C3S9A-ND | ON Semiconductor | IGBT 600V 6A 33W TO252AA Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| HGTD3N60C3S DISTI # HGTD3N60C3S | Renesas Electronics Corporation | - Bulk (Alt: HGTD3N60C3S) RoHS: Not Compliant Min Qty: 695 Container: Bulk | Americas - 0 |
|
| HGTD3N60C3S9A DISTI # HGTD3N60C3S9A | ON Semiconductor | POWER IGBT UFS 3A 600V TF=275NS MAX TO-252 TAPE AND REEL - Bulk (Alt: HGTD3N60C3S9A) RoHS: Compliant Min Qty: 863 Container: Bulk | Americas - 0 |
|
| HGTD3N60C3S9A | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA RoHS: Compliant | 11451 |
|
| HGTD3N60C3S | Harris Semiconductor | 6A, 600V, UFS SERIES N-CHANNEL IGBT RoHS: Not Compliant | 300 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: HGTD3N60A4S OMO.#: OMO-HGTD3N60A4S-1190 |
600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S) |
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Mfr.#: HGTD3N60B3S OMO.#: OMO-HGTD3N60B3S-1190 |
Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA |
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Mfr.#: HGTD3N60C3 OMO.#: OMO-HGTD3N60C3-1190 |
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA |
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Mfr.#: HGTD3N60C3D OMO.#: OMO-HGTD3N60C3D-1190 |
Neu und Original |
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Mfr.#: HGTD3N60C3S OMO.#: OMO-HGTD3N60C3S-1190 |
- Bulk (Alt: HGTD3N60C3S) |
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Mfr.#: HGTD3N60C3S9A |
IGBT 600V 6A 33W TO252AA |