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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGTD3N60B3S | Harris Semiconductor | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA RoHS: Not Compliant | 944 |
|
| HGTD3N60B3S9A | Harris Semiconductor | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA RoHS: Not Compliant | 2500 |
|
| HGTD3N60B3S | HARTING Technology Group | RoHS: Not Compliant | 1800 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: HGTD3N60A4S OMO.#: OMO-HGTD3N60A4S-1190 |
600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S) |
|
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Mfr.#: HGTD3N60B3S OMO.#: OMO-HGTD3N60B3S-1190 |
Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA |
|
|
Mfr.#: HGTD3N60C3 OMO.#: OMO-HGTD3N60C3-1190 |
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA |
|
|
Mfr.#: HGTD3N60C3D OMO.#: OMO-HGTD3N60C3D-1190 |
Neu und Original |
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Mfr.#: HGTD3N60C3S OMO.#: OMO-HGTD3N60C3S-1190 |
- Bulk (Alt: HGTD3N60C3S) |
|
Mfr.#: HGTD3N60C3S9A |
IGBT 600V 6A 33W TO252AA |
