HGTD3N60A4S

HGTD3N60A4S
Mfr. #:
HGTD3N60A4S
Hersteller:
Rochester Electronics, LLC
Beschreibung:
600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTD3N60A4S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGTD3, HGTD, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***pNet
Trans IGBT Chip N-CH 600V 17A 3-Pin(2+Tab) DPAK
Teil # Mfg. Beschreibung Aktie Preis
HGTD3N60A4S
DISTI # HGTD3N60A4S
ON Semiconductor600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S)
RoHS: Not Compliant
Min Qty: 736
Container: Bulk
Americas - 0
  • 7360:$0.4189
  • 3680:$0.4299
  • 2208:$0.4349
  • 1472:$0.4409
  • 736:$0.4439
HGTD3N60A4S
DISTI # 512-HGTD3N60A4S
ON SemiconductorMotor / Motion / Ignition Controllers & Drivers
RoHS: Not compliant
0
    HGTD3N60A4SFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-252AA
    RoHS: Compliant
    2691
    • 1000:$0.4500
    • 500:$0.4700
    • 100:$0.4900
    • 25:$0.5100
    • 1:$0.5500
    Bild Teil # Beschreibung
    HGTD3N60A4S

    Mfr.#: HGTD3N60A4S

    OMO.#: OMO-HGTD3N60A4S-1190

    600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S)
    HGTD3N60B3S

    Mfr.#: HGTD3N60B3S

    OMO.#: OMO-HGTD3N60B3S-1190

    Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA
    HGTD3N60C3

    Mfr.#: HGTD3N60C3

    OMO.#: OMO-HGTD3N60C3-1190

    Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA
    HGTD3N60C3D

    Mfr.#: HGTD3N60C3D

    OMO.#: OMO-HGTD3N60C3D-1190

    Neu und Original
    HGTD3N60C3S

    Mfr.#: HGTD3N60C3S

    OMO.#: OMO-HGTD3N60C3S-1190

    - Bulk (Alt: HGTD3N60C3S)
    HGTD3N60C3S9A

    Mfr.#: HGTD3N60C3S9A

    OMO.#: OMO-HGTD3N60C3S9A-ON-SEMICONDUCTOR

    IGBT 600V 6A 33W TO252AA
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von HGTD3N60A4S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,00 $
    0,00 $
    10
    0,00 $
    0,00 $
    100
    0,00 $
    0,00 $
    500
    0,00 $
    0,00 $
    1000
    0,00 $
    0,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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