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SI4116DY-T1-GE3

SI4116DY-T1-GE3
Mfr. #:
SI4116DY-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 25V 18A 8-SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4116DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4116DY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Teil-Aliasnamen
SI4466DY-T1-E3-S
Gewichtseinheit
0.006596 oz
Montageart
SMD/SMT
Paket-Koffer
SOIC-Narrow-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
2.5 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
15 ns
Anstiegszeit
11 ns
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
12.7 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Rds-On-Drain-Source-Widerstand
8.6 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
50 ns
Typische-Einschaltverzögerungszeit
13 ns
Kanal-Modus
Erweiterung
Tags
SI4116DY-T, SI4116, SI411, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 25 V 0.0086 Ohm 5 W Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 25V 18A 8-Pin SOIC N T/R / MOSFET N-CH 25V 18A 8-SOIC
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:18000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0115ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.4V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 25V, 18A, 8SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Power Dissipation Pd:5W; Voltage Vgs Max:12V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4116DY-T1-GE3
DISTI # V72:2272_09216447		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R
RoHS: Compliant		1222
  • 1000:$0.5113
  • 500:$0.6052
  • 250:$0.6959
  • 100:$0.6979
  • 25:$0.8497
  • 10:$0.8532
  • 1:$0.9820
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 25V 18A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8881In Stock
  • 1000:$0.5420
  • 500:$0.6865
  • 100:$0.8852
  • 10:$1.1200
  • 1:$1.2600
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 25V 18A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8881In Stock
  • 1000:$0.5420
  • 500:$0.6865
  • 100:$0.8852
  • 10:$1.1200
  • 1:$1.2600
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 25V 18A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		7500In Stock
  • 2500:$0.4911
SI4116DY-T1-GE3
DISTI # 29064963		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R
RoHS: Compliant		1222
  • 1000:$0.5113
  • 500:$0.6052
  • 250:$0.6959
  • 100:$0.6979
  • 25:$0.8497
  • 14:$0.8532
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R (Alt: SI4116DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.8429
  • 5000:€0.6039
  • 10000:€0.4899
  • 15000:€0.4329
  • 25000:€0.4149
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4116DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5429
  • 5000:$0.5269
  • 10000:$0.5049
  • 15000:$0.4909
  • 25000:$0.4779
SI4116DY-T1-GE3
DISTI # 16P3725		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 16P3725)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$0.8220
SI4116DY-T1-GE3
DISTI # 16P3725		Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 18A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:25V,On Resistance Rds(on):11.5mohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.4V,Product Range:-, RoHS Compliant: Yes78
  • 1:$1.5100
  • 10:$1.2500
  • 25:$1.1500
  • 50:$1.0500
  • 100:$0.9550
  • 250:$0.8890
  • 500:$0.8220
SI4116DY-T1-GE3
DISTI # R1082526		Vishay DaleTRANSITOR,SI4804BDY
RoHS: Compliant		0
  • 5:$1.2800
  • 25:$1.0600
  • 100:$0.9700
  • 250:$0.8900
  • 500:$0.8300
SI4116DY-T1-GE3
DISTI # 781-SI4116DY-T1-GE3		Vishay IntertechnologiesMOSFET 25V Vds 12V Vgs SO-8
RoHS: Compliant		2103
  • 1:$1.2600
  • 10:$1.0400
  • 100:$0.7960
  • 500:$0.6850
  • 1000:$0.6010
  • 2500:$0.6000
SI4116DY-T1-GE3
DISTI # 7103317P		Vishay IntertechnologiesMOSFET N-CHANNEL 25V 12.7A SOIC8, RL2600
  • 50:£0.6260
SI4116DY-T1-GE3
DISTI # 7103317		Vishay IntertechnologiesMOSFET N-CHANNEL 25V 12.7A SOIC8, PK725
  • 5:£0.9720
  • 50:£0.6260
SI4116DYT1GE3Vishay Intertechnologies 
RoHS: Compliant		Europe - 10000
    SI4116DY-T1-GE3Vishay IntertechnologiesMOSFET 25V Vds 12V Vgs SO-8
    RoHS: Compliant    		Americas -
    • 2500:$0.4820
    • 10000:$0.4410
    SI4116DY-T1-GE3
    DISTI # 1794777    		Vishay IntertechnologiesMOSFET, N CH, 25V, 18A, 8SOIC
    RoHS: Compliant    		0
    • 5:£1.0800
    • 25:£0.6960
    • 100:£0.6720
    • 250:£0.6470
    • 500:£0.6230
    SI4116DY-T1-GE3
    DISTI # C1S803601003591    		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R
    RoHS: Compliant    		1222
    • 250:$0.6961
    • 100:$0.6981
    • 25:$0.8498
    • 10:$0.8533
    Bild Teil # Beschreibung
    SI4116DY-T1-GE3

    Mfr.#: SI4116DY-T1-GE3

    OMO.#: OMO-SI4116DY-T1-GE3

    		 MOSFET 25V Vds 12V Vgs SO-8
    SI4116DY-T1-E3

    Mfr.#: SI4116DY-T1-E3

    OMO.#: OMO-SI4116DY-T1-E3

    		 MOSFET 25V Vds 12V Vgs SO-8
    SI4116DY-T1-E3

    Mfr.#: SI4116DY-T1-E3

    OMO.#: OMO-SI4116DY-T1-E3-VISHAY

    		 IGBT Transistors MOSFET 25V 18A 5.0W 8.6mohm @ 10V
    SI4116DY

    Mfr.#: SI4116DY

    OMO.#: OMO-SI4116DY-1190

    		 Neu und Original
    SI4116DY-T1

    Mfr.#: SI4116DY-T1

    OMO.#: OMO-SI4116DY-T1-1190

    		 Neu und Original
    SI4116DY-T1-GE3

    Mfr.#: SI4116DY-T1-GE3

    OMO.#: OMO-SI4116DY-T1-GE3-VISHAY

    		 MOSFET N-CH 25V 18A 8-SOIC
    SI4116DYT1GE3

    Mfr.#: SI4116DYT1GE3

    OMO.#: OMO-SI4116DYT1GE3-1190

    		 Small Signal Field-Effect Transistor, 12.7A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von SI4116DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,57 $
    0,57 $
    10
    0,54 $
    5,39 $
    100
    0,51 $
    51,03 $
    500
    0,48 $
    241,00 $
    1000
    0,45 $
    453,60 $
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