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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI4116DY-T1-GE3 DISTI # V72:2272_09216447 | Vishay Intertechnologies | Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R RoHS: Compliant | 0 | |
| SI4116DY-T1-GE3 DISTI # V36:1790_09216447 | Vishay Intertechnologies | Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R RoHS: Compliant | 0 |
|
| SI4116DY-T1-GE3 DISTI # SI4116DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 25V 18A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4423In Stock |
|
| SI4116DY-T1-GE3 DISTI # SI4116DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 25V 18A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4423In Stock |
|
| SI4116DY-T1-GE3 DISTI # SI4116DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 25V 18A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
| SI4116DY-T1-GE3 DISTI # SI4116DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R (Alt: SI4116DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| SI4116DY-T1-GE3 DISTI # SI4116DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4116DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4116DY-T1-GE3 DISTI # 16P3725 | Vishay Intertechnologies | Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 16P3725) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack | Americas - 0 |
|
| SI4116DY-T1-GE3 DISTI # 16P3725 | Vishay Intertechnologies | N CHANNEL MOSFET, 25V, 18A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0115ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.4V RoHS Compliant: Yes | 78 |
|
| SI4116DY-T1-GE3 DISTI # R1082526 | Vishay Dale | TRANSITOR,SI4804BDY RoHS: Compliant | 0 |
|
| SI4116DY-T1-GE3 DISTI # 781-SI4116DY-T1-GE3 | Vishay Intertechnologies | MOSFET 25V Vds 12V Vgs SO-8 RoHS: Compliant | 4112 |
|
| SI4116DY-T1-GE3 | --- | 90 | ||
| SI4116DY-T1-GE3 DISTI # 7103317P | Vishay Intertechnologies | MOSFET N-CHANNEL 25V 12.7A SOIC8, RL | 8290 |
|
| SI4116DYT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 12.7A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 10000 | |
| SI4116DY-T1-GE3 | Vishay Intertechnologies | MOSFET 25V Vds 12V Vgs SO-8 RoHS: Compliant | Americas - 7500 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SI4116DY-T1-GE3 OMO.#: OMO-SI4116DY-T1-GE3 |
MOSFET 25V Vds 12V Vgs SO-8 |
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Mfr.#: SI4116DY-T1-E3 OMO.#: OMO-SI4116DY-T1-E3 |
MOSFET 25V Vds 12V Vgs SO-8 |
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Mfr.#: SI4116DY-T1-E3 OMO.#: OMO-SI4116DY-T1-E3-VISHAY |
IGBT Transistors MOSFET 25V 18A 5.0W 8.6mohm @ 10V |
|
Mfr.#: SI4116DY OMO.#: OMO-SI4116DY-1190 |
Neu und Original |
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Mfr.#: SI4116DY-T1 OMO.#: OMO-SI4116DY-T1-1190 |
Neu und Original |
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Mfr.#: SI4116DY-T1-GE3 OMO.#: OMO-SI4116DY-T1-GE3-VISHAY |
MOSFET N-CH 25V 18A 8-SOIC |
|
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Mfr.#: SI4116DYT1GE3 OMO.#: OMO-SI4116DYT1GE3-1190 |
Small Signal Field-Effect Transistor, 12.7A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |