 | | |
| PartNumber | SI4116DY-T1-GE3 | SI4116DY-T1-E3 |
| Description | MOSFET 25V Vds 12V Vgs SO-8 | MOSFET 25V Vds 12V Vgs SO-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | - |
| Package / Case | SO-8 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | - |
| Id Continuous Drain Current | 18 A | - |
| Rds On Drain Source Resistance | 8.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 37 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 5 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1.75 mm | - |
| Length | 4.9 mm | - |
| Series | SI4 | SI4 |
| Transistor Type | 1 N-Channel | - |
| Width | 3.9 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 68 S | - |
| Fall Time | 9 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 10 ns | - |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 31 ns | - |
| Typical Turn On Delay Time | 7 ns | - |
| Part # Aliases | SI4466DY-T1-E3-S | SI4116DY-E3 |
| Unit Weight | 0.006596 oz | 0.006596 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4116DY-T1-GE3 | MOSFET 25V Vds 12V Vgs SO-8 | |
| SI4116DY-T1-E3 | MOSFET 25V Vds 12V Vgs SO-8 | ||
Vishay |
SI4116DY-T1-E3 | IGBT Transistors MOSFET 25V 18A 5.0W 8.6mohm @ 10V | |
| SI4116DY-T1-GE3 | MOSFET N-CH 25V 18A 8-SOIC | ||
| SI4116DY | Neu und Original | ||
| SI4116DY-T1 | Neu und Original | ||
| SI4116DYT1GE3 | Small Signal Field-Effect Transistor, 12.7A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |