CSD13306WT

CSD13306WT
Mfr. #:
CSD13306WT
Beschreibung:
MOSFET N-CH 12V 6DSBGA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD13306WT Datenblatt
Die Zustellung:
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Mehr Informationen:
CSD13306WT Mehr Informationen CSD13306WT Product Details
Produkteigenschaft
Attributwert
Hersteller
Texas Instruments
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
CSD13306W
Verpackung
Spule
Gewichtseinheit
0.000060 oz
Montageart
SMD/SMT
Handelsname
NexFET
Paket-Koffer
DSBGA-6
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
1.9 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
8 ns
Anstiegszeit
11 ns
Vgs-Gate-Source-Spannung
10 V
ID-Dauer-Drain-Strom
3.5 A
Vds-Drain-Source-Breakdown-Voltage
12 V
Vgs-th-Gate-Source-Threshold-Voltage
700 mV
Rds-On-Drain-Source-Widerstand
15.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
20 ns
Typische-Einschaltverzögerungszeit
7 ns
Qg-Gate-Ladung
8.6 nC
Vorwärts-Transkonduktanz-Min
15 S
Kanal-Modus
Erweiterung
Tags
CSD1330, CSD133, CSD13, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
12V, N ch NexFET MOSFET™, single WLP 1.0x1.5, 10.2mOhm 6-DSBGA -55 to 150
***et
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R
***i-Key
MOSFET N-CH 12V 6DSBGA
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Teil # Beschreibung Aktie Preis
CSD13306WT
DISTI # 296-41134-1-ND
MOSFET N-CH 12V 6DSBGA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1880In Stock
  • 100:$0.4202
  • 10:$0.5600
  • 1:$0.6700
CSD13306WT
DISTI # 296-41134-6-ND
MOSFET N-CH 12V 6DSBGA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1880In Stock
  • 100:$0.4202
  • 10:$0.5600
  • 1:$0.6700
CSD13306WT
DISTI # 296-41134-2-ND
MOSFET N-CH 12V 6DSBGA
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)
1750In Stock
  • 1250:$0.2312
  • 750:$0.2584
  • 500:$0.2992
  • 250:$0.3536
CSD13306WT
DISTI # CSD13306WT
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R (Alt: CSD13306WT)
RoHS: Compliant
Min Qty: 250
Container: Tape and Reel
Asia - 0
    CSD13306WT
    DISTI # CSD13306WT
    Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R - Tape and Reel (Alt: CSD13306WT)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel
    Americas - 0
    • 2000:$0.1969
    • 2500:$0.1869
    • 4500:$0.1809
    • 10000:$0.1749
    • 20000:$0.1699
    CSD13306WTCSD13306W 12 V N-Channel NexFET&#153,Power MOSFET500
    • 1000:$0.1600
    • 750:$0.1700
    • 500:$0.2200
    • 250:$0.2700
    • 100:$0.2900
    • 25:$0.3400
    • 10:$0.3600
    • 1:$0.4100
    CSD13306W
    DISTI # 595-CSD13306W
    MOSFET CSD13306W 12 V N-Channel NexFET Power MOSFET 6-DSBGA
    RoHS: Compliant
    3100
    • 1:$0.5200
    • 10:$0.4300
    • 100:$0.2620
    • 1000:$0.2030
    • 3000:$0.1730
    • 9000:$0.1610
    • 24000:$0.1530
    • 45000:$0.1490
    CSD13306WT
    DISTI # 595-CSD13306WT
    MOSFET 12V N-Channel NexFET Power MOSFET
    RoHS: Compliant
    0
    • 1:$0.5900
    • 10:$0.4900
    • 100:$0.3000
    • 250:$0.3000
    • 1000:$0.2320
    • 2500:$0.1980
    • 10000:$0.1840
    • 25000:$0.1750
    CSD13306WTSmall Signal Field-Effect Transistor
    RoHS: Compliant
    250
    • 1000:$0.1800
    • 500:$0.1900
    • 100:$0.2000
    • 25:$0.2100
    • 1:$0.2300
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    OMO.#: OMO-CSD13302W

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    CSD1306E

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    Neu und Original
    CSD13306WT

    Mfr.#: CSD13306WT

    OMO.#: OMO-CSD13306WT-TEXAS-INSTRUMENTS

    MOSFET N-CH 12V 6DSBGA
    CSD13202Q2

    Mfr.#: CSD13202Q2

    OMO.#: OMO-CSD13202Q2-TEXAS-INSTRUMENTS

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    Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von CSD13306WT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,24 $
    0,24 $
    10
    0,23 $
    2,28 $
    100
    0,22 $
    21,60 $
    500
    0,20 $
    102,00 $
    1000
    0,19 $
    192,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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