IXFH36N60P

IXFH36N60P
Mfr. #:
IXFH36N60P
Hersteller:
Littelfuse
Beschreibung:
Darlington Transistors MOSFET 600V 36A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFH36N60P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
IXFH36N60P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
FETs - Einzeln
Serie
IXFH36N60
Verpackung
Rohr
Gewichtseinheit
0.229281 oz
Montageart
Durchgangsloch
Handelsname
HyperFET
Paket-Koffer
TO-247-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
650 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
22 ns
Anstiegszeit
25 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
36 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Widerstand
190 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
80 ns
Typische-Einschaltverzögerungszeit
30 ns
Vorwärts-Transkonduktanz-Min
39 S
Kanal-Modus
Erweiterung
Tags
IXFH36, IXFH3, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 36 A 190 mO PolarHT hiPerFET Power Mosfet - TO-247
***ical
Trans MOSFET N-CH 600V 36A 3-Pin(3+Tab) TO-247AD
***ukat
N-Ch 600V 36A 650W 0,19R TO247AD
***ark
Mosfet, N, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:36A; On Resistance Rds(On):0.19Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5Vrohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFH36N60P
DISTI # IXFH36N60P-ND
IXYS CorporationMOSFET N-CH 600V 36A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
93In Stock
  • 510:$6.1551
  • 120:$7.3463
  • 30:$8.1407
  • 1:$9.9300
IXFH36N60P
DISTI # 58M7600
IXYS CorporationMOSFET, N, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:36A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.19ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:650W,MSL:-RoHS Compliant: Yes40
  • 1:$10.3700
  • 10:$9.3400
  • 25:$7.7700
  • 50:$7.2200
  • 100:$7.0600
  • 250:$6.4500
  • 500:$5.8800
IXFH36N60P
DISTI # 747-IXFH36N60P
IXYS CorporationMOSFET 600V 36A
RoHS: Compliant
695
  • 1:$10.3700
  • 10:$9.3400
  • 25:$7.7700
  • 50:$7.2200
  • 100:$7.0600
  • 250:$6.4500
  • 500:$5.8800
  • 1000:$5.6100
IXFH36N60PIXYS Corporation36 A, 600 V, 0.19 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AD5
  • 4:$5.4000
  • 2:$7.2000
  • 1:$10.8000
IXFH36N60P
DISTI # 1427299
IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant
40
  • 1:$15.8300
  • 30:$12.9800
  • 120:$11.7100
  • 510:$9.8200
IXFH36N60P
DISTI # 1427299
IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant
40
  • 1:£8.7400
  • 5:£8.1500
  • 10:£6.1000
  • 50:£5.6800
  • 100:£5.5500
Bild Teil # Beschreibung
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Mfr.#: IXFH30N40Q

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OMO.#: OMO-IXFH35N30Q-IXYS-CORPORATION

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OMO.#: OMO-IXFH32N48-IXYS-CORPORATION

MOSFET N-CH 480V 32A TO247AD
IXFH30N50Q3

Mfr.#: IXFH30N50Q3

OMO.#: OMO-IXFH30N50Q3-IXYS-CORPORATION

Darlington Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A
IXFH36N60P

Mfr.#: IXFH36N60P

OMO.#: OMO-IXFH36N60P-IXYS-CORPORATION

Darlington Transistors MOSFET 600V 36A
IXFH30N50P

Mfr.#: IXFH30N50P

OMO.#: OMO-IXFH30N50P-IXYS-CORPORATION

Darlington Transistors MOSFET 500V 30A
IXFH32N50

Mfr.#: IXFH32N50

OMO.#: OMO-IXFH32N50-IXYS-CORPORATION

MOSFET 500V 32A
IXFH32N50Q

Mfr.#: IXFH32N50Q

OMO.#: OMO-IXFH32N50Q-IXYS-CORPORATION

MOSFET 32 Amps 500V 0.15 Rds
IXFH30N50

Mfr.#: IXFH30N50

OMO.#: OMO-IXFH30N50-IXYS-CORPORATION

MOSFET 30 Amps 500V 0.16 Rds
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von IXFH36N60P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
8,10 $
8,10 $
10
7,70 $
76,95 $
100
7,29 $
729,00 $
500
6,88 $
3 442,50 $
1000
6,48 $
6 480,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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