BSD214SN H6327

BSD214SN H6327
Mfr. #:
BSD214SN H6327
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET SMALL SIGNAL+P-CH
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSD214SN H6327 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
FETs - Einzeln
Serie
BSD214
Verpackung
Spule
Teil-Aliasnamen
BSD214SNH6327XT BSD214SNH6327XTSA1 SP000917656
Montageart
SMD/SMT
Paket-Koffer
PG-SOT363
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
1 N-Channel
Transistor-Typ
1 P-Channel
Pd-Verlustleistung
500 mW
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
1.4 ns
Anstiegszeit
7.8 ns
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
1.5 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Vgs-th-Gate-Source-Threshold-Voltage
950 mV
Rds-On-Drain-Source-Widerstand
250 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
6.8 ns
Typische-Einschaltverzögerungszeit
4.1 ns
Qg-Gate-Ladung
0.8 nC
Vorwärts-Transkonduktanz-Min
4 S
Kanal-Modus
Erweiterung
Entwicklungs-Kit
-
Tags
BSD214SNH, BSD214S, BSD214, BSD21, BSD2, BSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BSD214SNH6327XTSA1
DISTI # 30299417
Infineon Technologies AGTrans MOSFET N-CH 20V 1.5A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant
9000
  • 99000:$0.0547
  • 45000:$0.0566
  • 24000:$0.0634
  • 9000:$0.0682
  • 3000:$0.0758
BSD214SNH6327XTSA1
DISTI # BSD214SNH6327XTSA1-ND
Infineon Technologies AGMOSFET N-CH 20V 1.5A SOT363
RoHS: Compliant
Min Qty: 9000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 9000:$0.0867
BSD214SNH6327XTSA1
DISTI # C1S322000305995
Infineon Technologies AGTrans MOSFET N-CH 20V 1.5A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant
9000
  • 9000:$0.0738
BSD214SNH6327XTSA1
DISTI # BSD214SNH6327XTSA1
Infineon Technologies AGTrans MOSFET N-CH 20V 1.5A 6-Pin SOT-363 T/R - Tape and Reel (Alt: BSD214SNH6327XTSA1)
RoHS: Compliant
Min Qty: 9000
Container: Reel
Americas - 0
  • 9000:$0.0504
  • 15000:$0.0486
  • 24000:$0.0469
  • 45000:$0.0453
  • 90000:$0.0445
BSD214SNH6327Infineon Technologies AGSmall Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
9000
  • 1000:$0.0500
  • 25:$0.0600
  • 100:$0.0600
  • 500:$0.0600
  • 1:$0.0700
BSD214SNH6327XTSA1Infineon Technologies AGSmall Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
45000
  • 1000:$0.0500
  • 25:$0.0600
  • 100:$0.0600
  • 500:$0.0600
  • 1:$0.0700
BSD214SNH6327XTSA1International Rectifier 
RoHS: Not Compliant
3000
  • 1000:$0.0500
  • 25:$0.0600
  • 100:$0.0600
  • 500:$0.0600
  • 1:$0.0700
BSD214SN H6327
DISTI # 726-BSD214SNH6327
Infineon Technologies AGMOSFET SMALL SIGNAL+P-CH
RoHS: Compliant
4269
  • 1:$0.4000
  • 10:$0.2550
  • 100:$0.1100
  • 1000:$0.0840
  • 3000:$0.0640
BSD214SNH6327XTSA1
DISTI # 726-SP000917656
Infineon Technologies AGMOSFET SMALL SIGNAL+P-CH
RoHS: Compliant
9564
  • 1:$0.4900
  • 10:$0.3160
  • 100:$0.1360
  • 1000:$0.1040
  • 3000:$0.0790
Bild Teil # Beschreibung
BSD214SNH6327XTSA1

Mfr.#: BSD214SNH6327XTSA1

OMO.#: OMO-BSD214SNH6327XTSA1

MOSFET SMALL SIGNAL+P-CH
BSD214SN H6327

Mfr.#: BSD214SN H6327

OMO.#: OMO-BSD214SN-H6327

MOSFET SMALL SIGNAL+P-CH
BSD214SN

Mfr.#: BSD214SN

OMO.#: OMO-BSD214SN-1190

Neu und Original
BSD214SN H6327

Mfr.#: BSD214SN H6327

OMO.#: OMO-BSD214SN-H6327-1190

MOSFET SMALL SIGNAL+P-CH
BSD214SNH6327

Mfr.#: BSD214SNH6327

OMO.#: OMO-BSD214SNH6327-1190

- Bulk (Alt: BSD214SNH6327)
BSD214SNH6327XTSA1

Mfr.#: BSD214SNH6327XTSA1

OMO.#: OMO-BSD214SNH6327XTSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 20V 1.5A SOT363
BSD214SNL6327

Mfr.#: BSD214SNL6327

OMO.#: OMO-BSD214SNL6327-1190

Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSD214SN L6327

Mfr.#: BSD214SN L6327

OMO.#: OMO-BSD214SN-L6327-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET N-Ch 20V 1.5A SOT-363-6
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von BSD214SN H6327 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,10 $
0,10 $
10
0,09 $
0,91 $
100
0,09 $
8,64 $
500
0,08 $
40,80 $
1000
0,08 $
76,80 $
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