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Teil # | Mfg. | Beschreibung | Aktie | Preis |
---|---|---|---|---|
HGT1S12N60C3DS DISTI # HGT1S12N60C3DS | ON Semiconductor | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes - Bulk (Alt: HGT1S12N60C3DS) RoHS: Not Compliant Min Qty: 173 Container: Bulk | Americas - 0 |
|
HGT1S12N60C3DS | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Not Compliant | 565 |
|
HGT1S12N60C3 | Harris Semiconductor | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA RoHS: Not Compliant | 899 |
|
HGT1S12N60C3D | Harris Semiconductor | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA RoHS: Not Compliant | 2637 |
|
HGT1S12N60C3R | Harris Semiconductor | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA RoHS: Not Compliant | 1962 |
|
HGT1S12N60C3S9AR4501 | Harris Semiconductor | RoHS: Not Compliant | 2400 |
|
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: HGT1S12N60A4DS OMO.#: OMO-HGT1S12N60A4DS |
IGBT Transistors 12A 600V N-Ch | |
Mfr.#: HGT1S12N60A4DS9A OMO.#: OMO-HGT1S12N60A4DS9A-1190 |
Neu und Original | |
Mfr.#: HGT1S12N60C3DS9A OMO.#: OMO-HGT1S12N60C3DS9A-1190 |
Neu und Original | |
Mfr.#: HGT1S12N60C3DST OMO.#: OMO-HGT1S12N60C3DST-1190 |
Neu und Original | |
Mfr.#: HGT1S12N60C3S9A OMO.#: OMO-HGT1S12N60C3S9A-1190 |
Neu und Original | |
Mfr.#: HGT1S14N40G3VLS OMO.#: OMO-HGT1S14N40G3VLS-1190 |
- Bulk (Alt: HGT1S14N40G3VLS) | |
Mfr.#: HGT1S14N41G3VLS OMO.#: OMO-HGT1S14N41G3VLS-1190 |
14A, 410V N-Channel, Logic Level, Voltage - Bulk (Alt: HGT1S14N41G3VLS) | |
Mfr.#: HGT1S14N41G3VLS9A OMO.#: OMO-HGT1S14N41G3VLS9A-1190 |
Neu und Original | |
Mfr.#: HGT1S1N120BNDS OMO.#: OMO-HGT1S1N120BNDS-1190 |
Neu und Original | |
Mfr.#: HGT1S12N60C3S9AR4501 |
Neu und Original |