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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGT1S12N60C3DS DISTI # HGT1S12N60C3DS | ON Semiconductor | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes - Bulk (Alt: HGT1S12N60C3DS) RoHS: Not Compliant Min Qty: 173 Container: Bulk | Americas - 0 |
|
| HGT1S12N60C3DS | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Not Compliant | 565 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: HGT1S12N60A4S9A OMO.#: OMO-HGT1S12N60A4S9A |
IGBT Transistors 600V N-Channel IGBT SMPS Series |
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Mfr.#: HGT1S12N60A4D OMO.#: OMO-HGT1S12N60A4D-1190 |
Neu und Original |
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Mfr.#: HGT1S12N60A4DS |
IGBT 600V 54A 167W D2PAK |
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Mfr.#: HGT1S12N60A4DS9A OMO.#: OMO-HGT1S12N60A4DS9A-1190 |
Neu und Original |
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Mfr.#: HGT1S12N60A4S9A |
IGBT 600V 54A 167W TO263AB |
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Mfr.#: HGT1S12N60B3DS OMO.#: OMO-HGT1S12N60B3DS-1190 |
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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Mfr.#: HGT1S12N60B3G OMO.#: OMO-HGT1S12N60B3G-1190 |
Neu und Original |
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Mfr.#: HGT1S12N60C3 OMO.#: OMO-HGT1S12N60C3-1190 |
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA |
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Mfr.#: HGT1S12N60C3DST OMO.#: OMO-HGT1S12N60C3DST-1190 |
Neu und Original |
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Mfr.#: HGT1S12N60C3S9A OMO.#: OMO-HGT1S12N60C3S9A-1190 |
Neu und Original |