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HGT1S12N60A4S9A

HGT1S12N60A4S9A
Mfr. #:
HGT1S12N60A4S9A
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors 600V N-Channel IGBT SMPS Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGT1S12N60A4S9A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HGT1S12N60A4S9A DatasheetHGT1S12N60A4S9A Datasheet (P4-P6)HGT1S12N60A4S9A Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
E
Technologie:
Si
Paket / Koffer:
TO-263AB-3
Montageart:
SMD/SMT
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
2.7 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
35 A
Pd - Verlustleistung:
298 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
HGT1S12N60A4S9A
Verpackung:
Spule
Kontinuierlicher Kollektorstrom Ic Max:
54 A
Höhe:
4.83 mm
Länge:
10.67 mm
Breite:
9.65 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
55 A
Gate-Emitter-Leckstrom:
+/- 250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
800
Unterkategorie:
IGBTs
Gewichtseinheit:
0.046296 oz
Tags
HGT1S12N60A, HGT1S12, HGT1S1, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***ser
IGBTs 600V N-Channel IGBT SMPS Series
***i-Key
IGBT SMPS N-CHAN 600V TO-263AB
***rchild Semiconductor
The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Teil # Mfg. Beschreibung Aktie Preis
HGT1S12N60A4S9A
DISTI # HGT1S12N60A4S9ATR-ND		ON SemiconductorIGBT 600V 54A 167W TO263AB
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Limited Supply - Call
    HGT1S12N60A4S9A
    DISTI # HGT1S12N60A4S9ACT-ND    		ON SemiconductorIGBT 600V 54A 167W TO263AB
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      HGT1S12N60A4S9A
      DISTI # HGT1S12N60A4S9ADKR-ND      		ON SemiconductorIGBT 600V 54A 167W TO263AB
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        HGT1S12N60A4S9A
        DISTI # 512-HGT1S12N60A4S9A        		ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
        RoHS: Compliant        		0
          HGT1S12N60A4S9AFairchild Semiconductor Corporation 
          RoHS: Not Compliant          		750
            Bild Teil # Beschreibung
            HGT1S12N60A4DS

            Mfr.#: HGT1S12N60A4DS

            OMO.#: OMO-HGT1S12N60A4DS

            		 IGBT Transistors 12A 600V N-Ch
            HGT1S12N60A4

            Mfr.#: HGT1S12N60A4

            OMO.#: OMO-HGT1S12N60A4-1190

            		 Neu und Original
            HGT1S12N60A4D

            Mfr.#: HGT1S12N60A4D

            OMO.#: OMO-HGT1S12N60A4D-1190

            		 Neu und Original
            HGT1S12N60A4S9A

            Mfr.#: HGT1S12N60A4S9A

            OMO.#: OMO-HGT1S12N60A4S9A-ON-SEMICONDUCTOR

            		 IGBT 600V 54A 167W TO263AB
            HGT1S12N60B3S

            Mfr.#: HGT1S12N60B3S

            OMO.#: OMO-HGT1S12N60B3S-1190

            		 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
            HGT1S12N60C3DS

            Mfr.#: HGT1S12N60C3DS

            OMO.#: OMO-HGT1S12N60C3DS-37

            		 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes - Bulk (Alt: HGT1S12N60C3DS)
            HGT1S12N60C3DS9A

            Mfr.#: HGT1S12N60C3DS9A

            OMO.#: OMO-HGT1S12N60C3DS9A-1190

            		 Neu und Original
            HGT1S12N60C3S

            Mfr.#: HGT1S12N60C3S

            OMO.#: OMO-HGT1S12N60C3S-1190

            		 Neu und Original
            HGT1S12N60C3S9A

            Mfr.#: HGT1S12N60C3S9A

            OMO.#: OMO-HGT1S12N60C3S9A-1190

            		 Neu und Original
            HGT1S12N60C3S9AR4501

            Mfr.#: HGT1S12N60C3S9AR4501

            OMO.#: OMO-HGT1S12N60C3S9AR4501-1190

            		 Neu und Original
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            4500
            Menge eingeben:
            Der aktuelle Preis von HGT1S12N60A4S9A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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