HGT1S12N60B3S

HGT1S12N60B3S
Mfr. #:
HGT1S12N60B3S
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGT1S12N60B3S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGT1S12N60B, HGT1S12, HGT1S1, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***or
27A, 600V, UFS N-CHANNEL IGBT
Teil # Mfg. Beschreibung Aktie Preis
HGT1S12N60B3SHarris SemiconductorInsulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
RoHS: Not Compliant
1600
  • 1000:$1.2800
  • 500:$1.3400
  • 100:$1.4000
  • 25:$1.4600
  • 1:$1.5700
Bild Teil # Beschreibung
HGT1S10N120BNS

Mfr.#: HGT1S10N120BNS

OMO.#: OMO-HGT1S10N120BNS

IGBT Transistors 35A 1200V NPT N-Ch
HGT1S14N36G3VLS

Mfr.#: HGT1S14N36G3VLS

OMO.#: OMO-HGT1S14N36G3VLS

Motor / Motion / Ignition Controllers & Drivers Coil Dr 14A 360V
HGT1S10N120BNS

Mfr.#: HGT1S10N120BNS

OMO.#: OMO-HGT1S10N120BNS-ON-SEMICONDUCTOR

IGBT 1200V 35A 298W TO263AB
HGT1S12N60A4DS

Mfr.#: HGT1S12N60A4DS

OMO.#: OMO-HGT1S12N60A4DS-ON-SEMICONDUCTOR

IGBT 600V 54A 167W D2PAK
HGT1S14N36G3VLS

Mfr.#: HGT1S14N36G3VLS

OMO.#: OMO-HGT1S14N36G3VLS-ON-SEMICONDUCTOR

IGBT 390V 18A 100W TO263AB
HGT1S14N40G3VLS

Mfr.#: HGT1S14N40G3VLS

OMO.#: OMO-HGT1S14N40G3VLS-1190

- Bulk (Alt: HGT1S14N40G3VLS)
HGT1S14N41G3VLS

Mfr.#: HGT1S14N41G3VLS

OMO.#: OMO-HGT1S14N41G3VLS-1190

14A, 410V N-Channel, Logic Level, Voltage - Bulk (Alt: HGT1S14N41G3VLS)
HGT1S14N41G3VLSR

Mfr.#: HGT1S14N41G3VLSR

OMO.#: OMO-HGT1S14N41G3VLSR-1190

Neu und Original
HGT1S15N120C3S

Mfr.#: HGT1S15N120C3S

OMO.#: OMO-HGT1S15N120C3S-1190

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
HGT1S1N120BNDS

Mfr.#: HGT1S1N120BNDS

OMO.#: OMO-HGT1S1N120BNDS-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von HGT1S12N60B3S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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