HGT1S10N120BNS

Mfr. #:: HGT1S10N120BNS
Hersteller:: ON Semiconductor / Fairchild
Beschreibung:: IGBT Transistors 35A 1200V NPT N-Ch
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: HGT1S10N120BNS Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: ON Semiconductor

Produktkategorie:: IGBT-Transistoren

RoHS:: E

Technologie:: Si

Paket / Koffer:: TO-263AB-3

Montageart:: SMD/SMT

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 1200 V

Kollektor-Emitter-Sättigungsspannung:: 2.7 V

Maximale Gate-Emitter-Spannung:: 20 V

Kontinuierlicher Kollektorstrom bei 25 C:: 35 A

Pd - Verlustleistung:: 298 W

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Serie:: HGT1S10N120BNS

Verpackung:: Rohr

Kontinuierlicher Kollektorstrom Ic Max:: 35 A

Höhe:: 4.83 mm

Länge:: 10.67 mm

Breite:: 9.65 mm

Marke:: ON Semiconductor / Fairchild

Kontinuierlicher Kollektorstrom:: 55 A

Gate-Emitter-Leckstrom:: +/- 250 nA

Produktart:: IGBT-Transistoren

Werkspackungsmenge:: 800

Unterkategorie:: IGBTs

Gewichtseinheit:: 0.046296 oz

Tags: HGT1S10N120BNS, HGT1S10N120B, HGT1S10N1, HGT1S10, HGT1S1, HGT1S, HGT1, HGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGT1S10N120BNS Beschreibung

***ical: Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK Rail

***et: Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) TO-263AB Rail

***ark: TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-263AB

*** Source Electronics: 35A, 1200V, NPT Series N-Channel IGBT

***inecomponents.com: 1200V, NPT Series N-Channel IGBT

***i-Key: IGBT NPT N-CHAN 1200V TO-263AB

***ser: IGBTs 35A,1200V, NPT, N-Ch

***Semiconductor: IGBT, 1200V, NPT

***rchild Semiconductor: HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
HGT1S10N120BNST DISTI # V72:2272_06305664	ON Semiconductor	TO-263, SINGLE, 1200V, NPT SER	142	100:$2.0040 25:$2.0790 10:$2.3100 1:$2.9854
HGT1S10N120BNS DISTI # V36:1790_06359750	ON Semiconductor	Trans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK Rail	0	800000:$1.1230 400000:$1.1260 80000:$1.3650 8000:$1.7870 800:$1.8570
HGT1S10N120BNST DISTI # V36:1790_06305664	ON Semiconductor	TO-263, SINGLE, 1200V, NPT SER	0	800000:$1.0960 400000:$1.0980 80000:$1.2300 8000:$1.4410 800:$1.4750
HGT1S10N120BNST DISTI # HGT1S10N120BNSTCT-ND	ON Semiconductor	IGBT 1200V 35A 298W TO263AB RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1219In Stock	100:$1.8491 10:$2.3010 1:$2.5600
HGT1S10N120BNST DISTI # HGT1S10N120BNSTDKR-ND	ON Semiconductor	IGBT 1200V 35A 298W TO263AB RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1219In Stock	100:$1.8491 10:$2.3010 1:$2.5600
HGT1S10N120BNST DISTI # HGT1S10N120BNSTTR-ND	ON Semiconductor	IGBT 1200V 35A 298W TO263AB RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	800In Stock	5600:$1.1238 2400:$1.1378 1600:$1.2221 800:$1.4750
HGT1S10N120BNS DISTI # HGT1S10N120BNSFS-ND	ON Semiconductor	IGBT 1200V 35A 298W TO263AB RoHS: Compliant Min Qty: 800 Container: Tube	Limited Supply - Call	800:$1.8570
HGT1S10N120BNST DISTI # 33655150	ON Semiconductor	TO-263, SINGLE, 1200V, NPT SER	43200	800:$0.7910
HGT1S10N120BNS DISTI # 23486344	ON Semiconductor	Trans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK Rail	800	800:$1.2360
HGT1S10N120BNST DISTI # 33965439	ON Semiconductor	TO-263, SINGLE, 1200V, NPT SER	800	800:$1.0072
HGT1S10N120BNST DISTI # 25744132	ON Semiconductor	TO-263, SINGLE, 1200V, NPT SER	142	5:$2.9854
HGT1S10N120BNS DISTI # HGT1S10N120BNS	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) TO-263AB Rail - Bulk (Alt: HGT1S10N120BNS) RoHS: Compliant Min Qty: 92 Container: Bulk	Americas - 0	920:$3.2900 460:$3.3900 92:$3.4900 184:$3.4900 276:$3.4900
HGT1S10N120BNS DISTI # HGT1S10N120BNS	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) TO-263AB Rail - Rail/Tube (Alt: HGT1S10N120BNS) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	3200:$1.0900 4800:$1.0900 8000:$1.0900 800:$1.1900 1600:$1.1900
HGT1S10N120BNST DISTI # HGT1S10N120BNST	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R (Alt: HGT1S10N120BNST) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0	8000:€0.8659 4800:€0.9279 3200:€0.9999 1600:€1.0829 800:€1.2999
HGT1S10N120BNST DISTI # HGT1S10N120BNST	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: HGT1S10N120BNST) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	4800:$1.0900 8000:$1.0900 800:$1.1900 1600:$1.1900 3200:$1.1900
HGT1S10N120BNS DISTI # 98B1956	ON Semiconductor	TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-263AB RoHS Compliant: Yes	0	500:$2.4500 250:$2.5200 100:$3.0100 50:$3.4800 25:$3.7100 10:$4.2300 1:$4.8900
HGT1S10N120BNST DISTI # 29H0101	ON Semiconductor	IGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes	0	9600:$1.3700 2400:$1.4100 800:$1.5400 1:$1.5500
HGT1S10N120BNST DISTI # 31Y1824	ON Semiconductor	IGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes	496	500:$1.9900 250:$2.1900 100:$2.2900 50:$2.3900 25:$2.5000 10:$2.6000 1:$3.0200
HGT1S10N120BNS DISTI # 512-HGT1S10N120BNS	ON Semiconductor	IGBT Transistors 35A 1200V NPT N-Ch RoHS: Compliant	0
HGT1S10N120BNST DISTI # 512-HGT1S10N120BNST	ON Semiconductor	IGBT Transistors N-Channel IGBT NPT Series 1200V RoHS: Compliant	497	1:$2.7300 10:$2.3200 100:$2.0100 250:$1.9100 500:$1.7100 800:$1.4400 2400:$1.3700 4800:$1.3200
HGT1S10N120BNS	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant	493	1000:$1.3600 500:$1.4300 100:$1.4900 25:$1.5500 1:$1.6700
HGT1S10N120BNST DISTI # 8076660P	ON Semiconductor	IGBTFAIRCHILDHGT1S10N120BNST, RL	1410	400:£1.7550 200:£2.0700 40:£2.3850 8:£2.7050
HGT1S10N120BNST DISTI # 8076660	ON Semiconductor	IGBTFAIRCHILDHGT1S10N120BNST, PK	18	400:£1.7550 200:£2.0700 40:£2.3850 8:£2.7050 2:£3.0250
HGT1S10N120BNST DISTI # HGT1S10N120BNST	ON Semiconductor	Transistor: IGBT,1.2kV,17A,298W,D2PAK	1049	500:$1.1000 100:$1.1800 25:$1.3200 5:$1.6300 1:$1.9000
HGT1S10N120BNST DISTI # XSKDRABV0048009	ON SEMICONDUCTOR	DFlip-Flop,HC/UHSeries,1-Func,PositiveEdgeTriggered,8-Bit,TrueOutput,CMOS,PDSO20 RoHS: Compliant	1900 in Stock0 on Order	1900:$1.4000 800:$1.5000
HGT1S10N120BNST DISTI # 2454176	ON Semiconductor	IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3	697	500:£1.1100 250:£1.4700 100:£1.5600 10:£1.7900 1:£2.3700
HGT1S10N120BNST DISTI # 2454176	ON Semiconductor	IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3 RoHS: Compliant	496	4800:$2.0300 2400:$2.1100 800:$2.2200 500:$2.6400 250:$2.9400 100:$3.1000 10:$3.5700 1:$4.2000
HGT1S10N120BNST DISTI # 2454176RL	ON Semiconductor	IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3 RoHS: Compliant	0	4800:$2.0300 2400:$2.1100 800:$2.2200 500:$2.6400 250:$2.9400 100:$3.1000 10:$3.5700 1:$4.2000

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: HGT1S10N120BNST OMO.#: OMO-HGT1S10N120BNST	IGBT Transistors N-Channel IGBT NPT Series 1200V
	Mfr.#: HGT1S10N120BNS OMO.#: OMO-HGT1S10N120BNS	IGBT Transistors 35A 1200V NPT N-Ch
	Mfr.#: HGT1S10N120BNST OMO.#: OMO-HGT1S10N120BNST-ON-SEMICONDUCTOR	IGBT 1200V 35A 298W TO263AB
	Mfr.#: HGT1S10N1208NST OMO.#: OMO-HGT1S10N1208NST-1190	Neu und Original
	Mfr.#: HGT1S10N120BN OMO.#: OMO-HGT1S10N120BN-1190	Neu und Original
	Mfr.#: HGT1S10N120BNS OMO.#: OMO-HGT1S10N120BNS-ON-SEMICONDUCTOR	IGBT 1200V 35A 298W TO263AB
	Mfr.#: HGT1S10N50 OMO.#: OMO-HGT1S10N50-1190	Neu und Original
	Mfr.#: HGT1S10N120BNS 10N120BN OMO.#: OMO-HGT1S10N120BNS-10N120BN-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3000
Menge eingeben:

Der aktuelle Preis von HGT1S10N120BNS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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HGT1S10N120BNS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes