HGT1S10N1 stock, HGT1S10N1, HGT1S10N120BNST


PartNumber	HGT1S10N120BNST	HGT1S10N120BNS
Description	IGBT Transistors N-Channel IGBT NPT Series 1200V	IGBT Transistors 35A 1200V NPT N-Ch
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	IGBT Transistors	IGBT Transistors
RoHS	E	E
Technology	Si	Si
Package / Case	TO-263AB-3	TO-263AB-3
Mounting Style	SMD/SMT	SMD/SMT
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	1200 V	1200 V
Collector Emitter Saturation Voltage	2.7 V	2.7 V
Maximum Gate Emitter Voltage	20 V	20 V
Continuous Collector Current at 25 C	35 A	35 A
Pd Power Dissipation	298 W	298 W
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Series	HGT1S10N120BNS	HGT1S10N120BNS
Packaging	Reel	Tube
Continuous Collector Current Ic Max	35 A	35 A
Height	4.83 mm	4.83 mm
Length	10.67 mm	10.67 mm
Width	9.65 mm	9.65 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Continuous Collector Current	55 A	55 A
Gate Emitter Leakage Current	+/- 250 nA	+/- 250 nA
Product Type	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	800	800
Subcategory	IGBTs	IGBTs
Unit Weight	0.046296 oz	0.046296 oz

Search Part Number : "HGT1S10N1", Match & Start with "HGT1S10N1" - Total : 7

Hersteller	Teil #	Beschreibung
ON Semiconductor / Fairchild	HGT1S10N120BNST	IGBT Transistors N-Channel IGBT NPT Series 1200V
ON Semiconductor / Fairchild	HGT1S10N120BNS	IGBT Transistors 35A 1200V NPT N-Ch
ON Semiconductor	HGT1S10N120BNST	IGBT 1200V 35A 298W TO263AB
ON Semiconductor	HGT1S10N120BNS	IGBT 1200V 35A 298W TO263AB
	HGT1S10N1208NST	Neu und Original
	HGT1S10N120BN	Neu und Original
	HGT1S10N120BNS 10N120BN	Neu und Original

HGT1S10N1