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HGT1S10N120BNST

HGT1S10N120BNST
Mfr. #:
HGT1S10N120BNST
Hersteller:
ON Semiconductor
Beschreibung:
IGBT 1200V 35A 298W TO263AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGT1S10N120BNST Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Digi-ReelR Alternative Verpackung
Gewichtseinheit
0.046296 oz
Montageart
SMD/SMT
Paket-Koffer
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Eingabetyp
Standard
Befestigungsart
Oberflächenmontage
Lieferanten-Geräte-Paket
TO-263AB
Aufbau
Single
Leistung max
298W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
35A
Spannungs-Kollektor-Emitter-Breakdown-Max
1200V
IGBT-Typ
NPT
Strom-Kollektor-gepulster-Icm
80A
Vce-on-Max-Vge-Ic
2.7V @ 15V, 10A
Schaltenergie
320μJ (on), 800μJ (off)
Gate-Gebühr
100nC
Td-ein-aus-25°C
23ns/165ns
Testbedingung
960V, 10A, 10 Ohm, 15V
Pd-Verlustleistung
298 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
1200 V
Kollektor-Emitter-Sättigungsspannung
2.7 V
Kontinuierlicher Kollektorstrom-bei-25-C
35 A
Gate-Emitter-Leckstrom
+/- 250 nA
Maximale Gate-Emitter-Spannung
+/- 20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
35 A
Tags
HGT1S10N120BNS, HGT1S10N120B, HGT1S10N1, HGT1S10, HGT1S1, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, ON Semiconductor HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263)
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
HGT1S10N120BN Series 1200 V 35 A 298 W SMT NPT N-Channel IGBT - TO-263AB
***inecomponents.com
TO-263, SINGLE, 1200V, NPT Series N-Channel IGBT
***eco
TO-263, SINGLE, 1200V, NPT SERIES N-CHANNEL IGBT<AZ
***ser
IGBTs N-Channel IGBT NPT Series 1200V
***ark
IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3
***i-Key
IGBT NPT N-CHAN 1200V TO-263AB
***Semiconductor
IGBT, 1200V, NPT
***rchild Semiconductor
HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):2.45V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-263AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
IGBT, SINGOLO, 1.2KV, 35A, TO-263AB-3; Corrente di Collettore CC:35A; Tensione Saturaz Collettore-Emettitore Vce(on):2.45V; Dissipazione di Potenza Pd:298W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-263AB; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
HGT1S10N120BNST
DISTI # V72:2272_06305664		ON SemiconductorTO-263, SINGLE, 1200V, NPT SER142
  • 100:$2.0040
  • 25:$2.0790
  • 10:$2.3100
  • 1:$2.9854
HGT1S10N120BNST
DISTI # V36:1790_06305664		ON SemiconductorTO-263, SINGLE, 1200V, NPT SER0
    HGT1S10N120BNST
    DISTI # HGT1S10N120BNSTCT-ND    		ON SemiconductorIGBT 1200V 35A 298W TO263AB
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		1241In Stock
    • 100:$2.1815
    • 10:$2.6630
    • 1:$2.9600
    HGT1S10N120BNST
    DISTI # HGT1S10N120BNSTDKR-ND    		ON SemiconductorIGBT 1200V 35A 298W TO263AB
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		1241In Stock
    • 100:$2.1815
    • 10:$2.6630
    • 1:$2.9600
    HGT1S10N120BNST
    DISTI # HGT1S10N120BNSTTR-ND    		ON SemiconductorIGBT 1200V 35A 298W TO263AB
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)    		800In Stock
    • 2400:$1.4482
    • 1600:$1.5206
    • 800:$1.8030
    HGT1S10N120BNST
    DISTI # 33603808    		ON SemiconductorTO-263, SINGLE, 1200V, NPT SER9600
    • 800:$0.7986
    HGT1S10N120BNST
    DISTI # 25744132    		ON SemiconductorTO-263, SINGLE, 1200V, NPT SER142
    • 100:$2.0040
    • 25:$2.0790
    • 10:$2.3100
    • 5:$2.7140
    HGT1S10N120BNST
    DISTI # HGT1S10N120BNST    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R (Alt: HGT1S10N120BNST)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel    		Europe - 0
    • 8000:€0.8659
    • 4800:€0.9279
    • 3200:€0.9999
    • 1600:€1.0829
    • 800:€1.2999
    HGT1S10N120BNST
    DISTI # HGT1S10N120BNST    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: HGT1S10N120BNST)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel    		Americas - 0
    • 1600:$1.7900
    • 3200:$1.7900
    • 4800:$1.7900
    • 8000:$1.7900
    • 800:$1.8900
    HGT1S10N120BNST
    DISTI # 29H0101    		ON SemiconductorIGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes0
    • 9600:$1.3700
    • 2400:$1.4100
    • 800:$1.5400
    • 1:$1.5500
    HGT1S10N120BNST
    DISTI # 31Y1824    		ON SemiconductorIGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes496
    • 500:$1.9900
    • 250:$2.1900
    • 100:$2.2900
    • 50:$2.3900
    • 25:$2.5000
    • 10:$2.6000
    • 1:$3.0200
    HGT1S10N120BNST
    DISTI # 512-HGT1S10N120BNST    		ON SemiconductorIGBT Transistors N-Channel IGBT NPT Series 1200V
    RoHS: Compliant    		557
    • 1:$2.7300
    • 10:$2.3200
    • 100:$2.0100
    • 250:$1.9100
    • 500:$1.7100
    • 800:$1.4400
    • 2400:$1.3700
    • 4800:$1.3200
    HGT1S10N120BNS
    DISTI # 512-HGT1S10N120BNS    		ON SemiconductorIGBT Transistors 35A 1200V NPT N-Ch
    RoHS: Compliant    		0
      HGT1S10N120BNST
      DISTI # 8076660P      		ON SemiconductorIGBTFAIRCHILDHGT1S10N120BNST, RL1410
      • 400:£1.7550
      • 200:£2.0700
      • 40:£2.3850
      • 8:£2.7050
      HGT1S10N120BNST
      DISTI # 8076660      		ON SemiconductorIGBTFAIRCHILDHGT1S10N120BNST, PK38
      • 400:£1.7550
      • 200:£2.0700
      • 40:£2.3850
      • 8:£2.7050
      • 2:£3.0250
      HGT1S10N120BNST INSTOCK18466
        HGT1S10N120BNST
        DISTI # HGT1S10N120BNST        		ON SemiconductorTransistor: IGBT,1.2kV,17A,298W,D2PAK1049
        • 1:$1.9100
        • 5:$1.6400
        • 25:$1.3200
        • 100:$1.1800
        • 500:$1.1100
        HGT1S10N120BNST
        DISTI # 2454176        		ON SemiconductorIGBT, SINGLE, 1.2KV, 35A, TO-263AB-3
        RoHS: Compliant        		496
        • 500:$2.6400
        • 250:$2.9400
        • 100:$3.1000
        • 10:$3.5700
        • 1:$4.2000
        HGT1S10N120BNST
        DISTI # 2454176RL        		ON SemiconductorIGBT, SINGLE, 1.2KV, 35A, TO-263AB-3
        RoHS: Compliant        		0
        • 500:$2.6400
        • 250:$2.9400
        • 100:$3.1000
        • 10:$3.5700
        • 1:$4.2000
        HGT1S10N120BNST
        DISTI # 2454176        		ON SemiconductorIGBT, SINGLE, 1.2KV, 35A, TO-263AB-3720
        • 500:£1.1400
        • 250:£1.5200
        • 100:£1.6000
        • 10:£1.8300
        • 1:£2.4300
        Bild Teil # Beschreibung
        HGT1S10N120BNST

        Mfr.#: HGT1S10N120BNST

        OMO.#: OMO-HGT1S10N120BNST

        		 IGBT Transistors N-Channel IGBT NPT Series 1200V
        HGT1S10N120BNS

        Mfr.#: HGT1S10N120BNS

        OMO.#: OMO-HGT1S10N120BNS

        		 IGBT Transistors 35A 1200V NPT N-Ch
        HGT1S10N120BNST

        Mfr.#: HGT1S10N120BNST

        OMO.#: OMO-HGT1S10N120BNST-ON-SEMICONDUCTOR

        		 IGBT 1200V 35A 298W TO263AB
        HGT1S10N1208NST

        Mfr.#: HGT1S10N1208NST

        OMO.#: OMO-HGT1S10N1208NST-1190

        		 Neu und Original
        HGT1S10N120BN

        Mfr.#: HGT1S10N120BN

        OMO.#: OMO-HGT1S10N120BN-1190

        		 Neu und Original
        HGT1S10N120BNS

        Mfr.#: HGT1S10N120BNS

        OMO.#: OMO-HGT1S10N120BNS-ON-SEMICONDUCTOR

        		 IGBT 1200V 35A 298W TO263AB
        HGT1S10N50

        Mfr.#: HGT1S10N50

        OMO.#: OMO-HGT1S10N50-1190

        		 Neu und Original
        HGT1S10N120BNS 10N120BN

        Mfr.#: HGT1S10N120BNS 10N120BN

        OMO.#: OMO-HGT1S10N120BNS-10N120BN-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4500
        Menge eingeben:
        Der aktuelle Preis von HGT1S10N120BNST dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,17 $
        1,17 $
        10
        1,11 $
        11,11 $
        100
        1,05 $
        105,25 $
        500
        0,99 $
        497,00 $
        1000
        0,94 $
        935,50 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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