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HGT1S12N60B

HGT1S12N60B3D vs HGT1S12N60B3DS vs HGT1S12N60B3G

 
PartNumberHGT1S12N60B3DHGT1S12N60B3DSHGT1S12N60B3G
DescriptionInsulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AAInsulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Hersteller Teil # Beschreibung RFQ
HGT1S12N60B3D Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
HGT1S12N60B3DS Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60B3S Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60B3G Neu und Original
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