HGT1S12N60B3D

HGT1S12N60B3D
Mfr. #:
HGT1S12N60B3D
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGT1S12N60B3D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGT1S12N60B, HGT1S12, HGT1S1, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key Marketplace
27A, 600V, N-CHANNEL IGBT
Teil # Mfg. Beschreibung Aktie Preis
HGT1S12N60B3DHarris SemiconductorInsulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
RoHS: Not Compliant
400
  • 1000:$1.2500
  • 500:$1.3200
  • 100:$1.3700
  • 25:$1.4300
  • 1:$1.5400
HGT1S12N60B3DSHarris SemiconductorInsulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
RoHS: Not Compliant
1100
  • 1000:$1.2800
  • 500:$1.3400
  • 100:$1.4000
  • 25:$1.4600
  • 1:$1.5700
Bild Teil # Beschreibung
HGT1S10N120BNST

Mfr.#: HGT1S10N120BNST

OMO.#: OMO-HGT1S10N120BNST

IGBT Transistors N-Channel IGBT NPT Series 1200V
HGT1S12N60A4S9A

Mfr.#: HGT1S12N60A4S9A

OMO.#: OMO-HGT1S12N60A4S9A

IGBT Transistors 600V N-Channel IGBT SMPS Series
HGT1S10N120BN

Mfr.#: HGT1S10N120BN

OMO.#: OMO-HGT1S10N120BN-1190

Neu und Original
HGT1S10N50

Mfr.#: HGT1S10N50

OMO.#: OMO-HGT1S10N50-1190

Neu und Original
HGT1S12N60A4

Mfr.#: HGT1S12N60A4

OMO.#: OMO-HGT1S12N60A4-1190

Neu und Original
HGT1S12N60A4DS9A

Mfr.#: HGT1S12N60A4DS9A

OMO.#: OMO-HGT1S12N60A4DS9A-1190

Neu und Original
HGT1S12N60C3

Mfr.#: HGT1S12N60C3

OMO.#: OMO-HGT1S12N60C3-1190

Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA
HGT1S12N60C3S9A

Mfr.#: HGT1S12N60C3S9A

OMO.#: OMO-HGT1S12N60C3S9A-1190

Neu und Original
HGT1S14N41G3VL29A

Mfr.#: HGT1S14N41G3VL29A

OMO.#: OMO-HGT1S14N41G3VL29A-1190

Neu und Original
HGT1S14N37G3VLS_R4662

Mfr.#: HGT1S14N37G3VLS_R4662

OMO.#: OMO-HGT1S14N37G3VLS-R4662-1190

- Bulk (Alt: HGT1S14N37G3VLS_R4662)
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von HGT1S12N60B3D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,88 $
1,88 $
10
1,78 $
17,81 $
100
1,69 $
168,75 $
500
1,59 $
796,90 $
1000
1,50 $
1 500,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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