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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGT1S12N60B3D | Harris Semiconductor | 27A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE RoHS: Not Compliant | 400 |
|
| HGT1S12N60B3DS | Harris Semiconductor | 27A, 600V, UFS N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE RoHS: Not Compliant | 1100 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: HGT1S10N1208NST OMO.#: OMO-HGT1S10N1208NST-1190 |
Neu und Original |
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Mfr.#: HGT1S12N60B3D OMO.#: OMO-HGT1S12N60B3D-1190 |
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA |
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Mfr.#: HGT1S12N60B3S OMO.#: OMO-HGT1S12N60B3S-1190 |
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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Mfr.#: HGT1S12N60C3 OMO.#: OMO-HGT1S12N60C3-1190 |
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA |
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Mfr.#: HGT1S12N60C3DS9A OMO.#: OMO-HGT1S12N60C3DS9A-1190 |
Neu und Original |
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Mfr.#: HGT1S14N36G3VLS |
IGBT 390V 18A 100W TO263AB |
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Mfr.#: HGT1S14N41G3VL29A OMO.#: OMO-HGT1S14N41G3VL29A-1190 |
Neu und Original |
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Mfr.#: HGT1S14N41G3VLS OMO.#: OMO-HGT1S14N41G3VLS-1190 |
14A, 410V N-Channel, Logic Level, Voltage - Bulk (Alt: HGT1S14N41G3VLS) |
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Mfr.#: HGT1S14N41G3VLSR OMO.#: OMO-HGT1S14N41G3VLSR-1190 |
Neu und Original |
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Mfr.#: HGT1S12N60C3S9AR4501 |
Neu und Original |