HGT1S12N60C3S9AR4501

HGT1S12N60C3S9AR4501
Mfr. #:
HGT1S12N60C3S9AR4501
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGT1S12N60C3S9AR4501 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGT1S12N60C3S, HGT1S12N60C, HGT1S12, HGT1S1, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key Marketplace
27A, 600V, UFS N-CHANNEL IGBT
Teil # Mfg. Beschreibung Aktie Preis
HGT1S12N60C3S9AR4501Harris Semiconductor27A, 600V, UFS N-CHANNEL IGBT
RoHS: Not Compliant
2400
  • 1000:$1.4400
  • 500:$1.5100
  • 100:$1.5800
  • 25:$1.6400
  • 1:$1.7700
Bild Teil # Beschreibung
HGT1S12N60A4S9A

Mfr.#: HGT1S12N60A4S9A

OMO.#: OMO-HGT1S12N60A4S9A

IGBT Transistors 600V N-Channel IGBT SMPS Series
HGT1S12N60A4D

Mfr.#: HGT1S12N60A4D

OMO.#: OMO-HGT1S12N60A4D-1190

Neu und Original
HGT1S12N60A4DS

Mfr.#: HGT1S12N60A4DS

OMO.#: OMO-HGT1S12N60A4DS-ON-SEMICONDUCTOR

IGBT 600V 54A 167W D2PAK
HGT1S12N60A4S9A

Mfr.#: HGT1S12N60A4S9A

OMO.#: OMO-HGT1S12N60A4S9A-ON-SEMICONDUCTOR

IGBT 600V 54A 167W TO263AB
HGT1S12N60B3D

Mfr.#: HGT1S12N60B3D

OMO.#: OMO-HGT1S12N60B3D-1190

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
HGT1S12N60B3DS

Mfr.#: HGT1S12N60B3DS

OMO.#: OMO-HGT1S12N60B3DS-1190

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60B3G

Mfr.#: HGT1S12N60B3G

OMO.#: OMO-HGT1S12N60B3G-1190

Neu und Original
HGT1S12N60C3

Mfr.#: HGT1S12N60C3

OMO.#: OMO-HGT1S12N60C3-1190

Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA
HGT1S12N60C3DST

Mfr.#: HGT1S12N60C3DST

OMO.#: OMO-HGT1S12N60C3DST-1190

Neu und Original
HGT1S12N60C3S

Mfr.#: HGT1S12N60C3S

OMO.#: OMO-HGT1S12N60C3S-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von HGT1S12N60C3S9AR4501 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
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10
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100
0,00 $
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500
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1000
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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