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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGT1S12N60A4DS DISTI # 28995997 | ON Semiconductor | Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(2+Tab) D2PAK Rail | 8000 |
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| HGT1S12N60A4DS DISTI # HGT1S12N60A4DS-ND | ON Semiconductor | IGBT 600V 54A 167W D2PAK RoHS: Compliant Min Qty: 800 Container: Tube | Limited Supply - Call |
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| HGT1S12N60A4DS DISTI # HGT1S12N60A4DS | ON Semiconductor | Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail (Alt: HGT1S12N60A4DS) RoHS: Compliant Min Qty: 1 | Europe - 0 |
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| HGT1S12N60A4DS DISTI # HGT1S12N60A4DS | ON Semiconductor | Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail - Bulk (Alt: HGT1S12N60A4DS) RoHS: Compliant Min Qty: 92 Container: Bulk | Americas - 0 |
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| HGT1S12N60A4DS DISTI # HGT1S12N60A4DS | ON Semiconductor | Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail - Rail/Tube (Alt: HGT1S12N60A4DS) RoHS: Compliant Min Qty: 800 Container: Tube | Americas - 0 |
|
| HGT1S12N60A4DS DISTI # 95B2571 | ON Semiconductor | SINGLE IGBT, 600V, 54A,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes | 0 |
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| HGT1S12N60A4DS DISTI # 512-HGT1S12N60A4DS | ON Semiconductor | IGBT Transistors 12A 600V N-Ch RoHS: Compliant | 0 | |
| HGT1S12N60A4DS | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant | 2395 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: HGT1S10N120BNST OMO.#: OMO-HGT1S10N120BNST |
IGBT Transistors N-Channel IGBT NPT Series 1200V |
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Mfr.#: HGT1S12N60A4S9A OMO.#: OMO-HGT1S12N60A4S9A |
IGBT Transistors 600V N-Channel IGBT SMPS Series |
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Mfr.#: HGT1S10N120BNS |
IGBT 1200V 35A 298W TO263AB |
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Mfr.#: HGT1S10N50 OMO.#: OMO-HGT1S10N50-1190 |
Neu und Original |
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Mfr.#: HGT1S12N60C3 OMO.#: OMO-HGT1S12N60C3-1190 |
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA |
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Mfr.#: HGT1S14N36G3VLS |
IGBT 390V 18A 100W TO263AB |
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Mfr.#: HGT1S14N40G3VLS OMO.#: OMO-HGT1S14N40G3VLS-1190 |
- Bulk (Alt: HGT1S14N40G3VLS) |
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Mfr.#: HGT1S14N41G3VLS9A OMO.#: OMO-HGT1S14N41G3VLS9A-1190 |
Neu und Original |
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Mfr.#: HGT1S15N120C3S OMO.#: OMO-HGT1S15N120C3S-1190 |
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB |
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Mfr.#: HGT1S14N36G3VLT_NL OMO.#: OMO-HGT1S14N36G3VLT-NL-1190 |
Insulated Gate Bipolar Transistor, 18A I(C), N-Channel, TO-263AB |