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SI2319DS-T1-GE3

SI2319DS-T1-GE3
Mfr. #:
SI2319DS-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET P-CH 40V 2.3A SOT23-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2319DS-T1-GE3 Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
SI2319DS-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Teil-Aliasnamen
SI2319DS-GE3
Gewichtseinheit
0.050717 oz
Montageart
SMD/SMT
Paket-Koffer
SOT-23-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 P-Channel
Pd-Verlustleistung
750 mW
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
2.3 A
Vds-Drain-Source-Breakdown-Voltage
- 40 V
Rds-On-Drain-Source-Widerstand
82 mOhms
Transistor-Polarität
P-Kanal
Tags
SI2319DS-T, SI2319DS, SI2319D, SI2319, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
P-Channel 40 V 82 mO 17 nC Surface Mount Power Mosfet - SOT-23
***et
Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.3A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:750mW
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Teil # Mfg. Beschreibung Aktie Preis
SI2319DS-T1-GE3
DISTI # V72:2272_09216803		Vishay IntertechnologiesP-CHANNEL 40-V (D-S) MOSFET
RoHS: Compliant		466
  • 500:$0.3784
  • 250:$0.4106
  • 100:$0.4562
  • 25:$0.5402
  • 10:$0.6602
  • 1:$0.8143
SI2319DS-T1-GE3
DISTI # V36:1790_09216803		Vishay IntertechnologiesP-CHANNEL 40-V (D-S) MOSFET
RoHS: Compliant		0
  • 3000000:$0.2591
  • 1500000:$0.2592
  • 300000:$0.2699
  • 30000:$0.2866
  • 3000:$0.2893
SI2319DS-T1-GE3
DISTI # SI2319DS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 40V 2.3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1570In Stock
  • 1000:$0.3288
  • 500:$0.4110
  • 100:$0.5199
  • 10:$0.6780
  • 1:$0.7700
SI2319DS-T1-GE3
DISTI # SI2319DS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 40V 2.3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1570In Stock
  • 1000:$0.3288
  • 500:$0.4110
  • 100:$0.5199
  • 10:$0.6780
  • 1:$0.7700
SI2319DS-T1-GE3
DISTI # SI2319DS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 40V 2.3A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.2527
  • 15000:$0.2594
  • 6000:$0.2693
  • 3000:$0.2893
SI2319DS-T1-GE3
DISTI # 32404566		Vishay IntertechnologiesP-CHANNEL 40-V (D-S) MOSFET
RoHS: Compliant		466
  • 27:$0.8143
SI2319DS-T1-GE3
DISTI # SI2319DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2319DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SI2319DS-T1-GE3
    DISTI # 15R4910    		Vishay IntertechnologiesP CHANNEL MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.3A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,No. of Pins:3PinsRoHS Compliant: Yes0
    • 50000:$0.2460
    • 30000:$0.2570
    • 20000:$0.2760
    • 10000:$0.2950
    • 5000:$0.3200
    • 1:$0.3270
    SI2319DS-T1-GE3
    DISTI # 84R8030    		Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.3A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:750mW RoHS Compliant: Yes0
    • 1000:$0.3070
    • 500:$0.3840
    • 250:$0.4240
    • 100:$0.4650
    • 50:$0.5390
    • 25:$0.6130
    • 1:$0.7580
    SI2319DS-T1-GE3
    DISTI # 781-SI2319DS-GE3    		Vishay IntertechnologiesMOSFET 40V 3.0A 1.25W 82mohm @ 10V
    RoHS: Compliant    		8364
    • 1:$0.7500
    • 10:$0.6060
    • 100:$0.4590
    • 500:$0.3800
    • 1000:$0.3040
    • 3000:$0.2750
    • 6000:$0.2560
    • 9000:$0.2470
    SI2319DS-T1-GE3
    DISTI # 1867181    		Vishay IntertechnologiesP CH MOSFET
    RoHS: Compliant    		0
    • 10:$0.2390
    Bild Teil # Beschreibung
    SI2319DDS-T1-GE3

    Mfr.#: SI2319DDS-T1-GE3

    OMO.#: OMO-SI2319DDS-T1-GE3

    		 MOSFET -40V Vds 20V Vgs SOT-23
    SI2319DS-T1-E3

    Mfr.#: SI2319DS-T1-E3

    OMO.#: OMO-SI2319DS-T1-E3

    		 MOSFET 40V 3.0A 1.25W 82 mohms @ 10V
    SI2319DS-T1-GE3

    Mfr.#: SI2319DS-T1-GE3

    OMO.#: OMO-SI2319DS-T1-GE3

    		 MOSFET 40V 3.0A 1.25W 82mohm @ 10V
    SI2319DS

    Mfr.#: SI2319DS

    OMO.#: OMO-SI2319DS-1190

    		 Neu und Original
    SI2319DS-1-E3

    Mfr.#: SI2319DS-1-E3

    OMO.#: OMO-SI2319DS-1-E3-1190

    		 Neu und Original
    SI2319DS-T1

    Mfr.#: SI2319DS-T1

    OMO.#: OMO-SI2319DS-T1-1190

    		 MOSFET RECOMMENDED ALT 781-SI2319DS-T1-E3
    SI2319DS-T1-E3

    Mfr.#: SI2319DS-T1-E3

    OMO.#: OMO-SI2319DS-T1-E3-VISHAY

    		 MOSFET P-CH 40V 2.3A SOT23-3
    SI2319DS-T1-GE3

    Mfr.#: SI2319DS-T1-GE3

    OMO.#: OMO-SI2319DS-T1-GE3-VISHAY

    		 MOSFET P-CH 40V 2.3A SOT23-3
    SI2319DDS-T1-GE3

    Mfr.#: SI2319DDS-T1-GE3

    OMO.#: OMO-SI2319DDS-T1-GE3-VISHAY

    		 MOSFET P-CHAN 40V
    SI2319DS-T1-E3-CUT TAPE

    Mfr.#: SI2319DS-T1-E3-CUT TAPE

    OMO.#: OMO-SI2319DS-T1-E3-CUT-TAPE-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von SI2319DS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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