SI2319DS-T1-E3

Mfr. #:: SI2319DS-T1-E3
Hersteller:: Vishay
Beschreibung:: MOSFET P-CH 40V 2.3A SOT23-3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI2319DS-T1-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SI2319DS-T1-E3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: VISHAY

Produktkategorie: FETs - Einzeln

Serie: GrabenFETR

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: SI2319DS-E3

Gewichtseinheit: 0.050717 oz

Montageart: SMD/SMT

Paket-Koffer: TO-236-3, SC-59, SOT-23-3

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 1 Channel

Lieferanten-Geräte-Paket: SOT-23-3 (TO-236)

Aufbau: Single

FET-Typ: MOSFET P-Kanal, Metalloxid

Leistung max: 750mW

Transistor-Typ: 1 P-Channel

Drain-zu-Source-Spannung-Vdss: 40V

Eingangskapazität-Ciss-Vds: 470pF @ 20V

FET-Funktion: Standard

Strom-Dauer-Drain-Id-25°C: 2.3A (Ta)

Rds-On-Max-Id-Vgs: 82 mOhm @ 3A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Lade-Qg-Vgs: 17nC @ 10V

Pd-Verlustleistung: 750 mW

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 15 ns

Anstiegszeit: 15 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 2.3 A

Vds-Drain-Source-Breakdown-Voltage: - 40 V

Rds-On-Drain-Source-Widerstand: 82 mOhms

Transistor-Polarität: P-Kanal

Typische-Ausschaltverzögerungszeit: 25 ns

Typische-Einschaltverzögerungszeit: 7 ns

Kanal-Modus: Erweiterung

Tags: SI2319DS-T, SI2319DS, SI2319D, SI2319, SI231, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2319DS-T1-E3 Beschreibung

***th Star Micro: Transistor MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R

***ure Electronics: Single P-Channel 40 V 82 mOhms Surface Mount Power Mosfet - SOT-23

***et Europe: Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R

***ied Electronics & Automation: TRANS MOSFET P-CH 40V 2.3A 3-PIN SOT-23T/R

***itex: Transisitor P-MOSFET, 3A, 40V, SOT23

***eco: P-CH MOSFET SOT-23 40V 82MOHM @ 10V<AZ

***Components: MOSFET P-Channel 40V 2.3A SOT23

***ark: P-Channel 40-V (D-S) Mosfet Rohs Compliant: No

***i-Key: MOSFET P-CH 40V 2.3A SOT23-3

***: P-CHANNEL 40-V (D-S) MOSFET

***ronik: P-CHANNEL-FET 3,0A 40V SOT23

***nell: MOSFET,P CH,40V,2.3A,SOT23-3; Transistor Polarity:P Channel; Current Id Max:-2.3A; Drain Source Voltage Vds:-40V; On State Resistance:65mohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:-20V; Power Dissipation:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3

***ment14 APAC: MOSFET,P CH,40V,2.3A,SOT23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:-2.3A; Power Dissipation Pd:750mW; Voltage Vgs Max:-20V

SI2319DS-T1-E3 Mehr Informationen

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI2319DS-T1-E3 DISTI # V72:2272_07432254	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	41	25:$0.5101 10:$0.6604 1:$0.8145
SI2319DS-T1-E3 DISTI # V36:1790_07432254	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	0
SI2319DS-T1-E3 DISTI # SI2319DS-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 40V 2.3A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	96859In Stock	1000:$0.3288 500:$0.4110 100:$0.5199 10:$0.6780 1:$0.7700
SI2319DS-T1-E3 DISTI # SI2319DS-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 40V 2.3A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	96859In Stock	1000:$0.3288 500:$0.4110 100:$0.5199 10:$0.6780 1:$0.7700
SI2319DS-T1-E3 DISTI # SI2319DS-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 40V 2.3A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	96000In Stock	30000:$0.2527 15000:$0.2594 6000:$0.2693 3000:$0.2893
SI2319DS-T1-E3 DISTI # 32706761	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	54000	3000:$0.3446
SI2319DS-T1-E3 DISTI # 33718350	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	18000	3000:$0.3656
SI2319DS-T1-E3 DISTI # 30714766	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	480	12:$2.2000
SI2319DS-T1-E3 DISTI # 30667360	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	41	24:$0.8145
SI2319DS-T1-E3 DISTI # SI2319DS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2319DS-T1-E3) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 1917	30000:$0.3016 18000:$0.3115 12000:$0.3220 6000:$0.3333 1:$0.3454
SI2319DS-T1-E3 DISTI # SI2319DS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R (Alt: SI2319DS-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.2229 18000:€0.2399 12000:€0.2599 6000:€0.3019 3000:€0.4419
SI2319DS-T1-E3 DISTI # SI2319DS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2319DS-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2436 18000:$0.2503 12000:$0.2575 6000:$0.2684 3000:$0.2766
SI2319DS-T1-E3 DISTI # 06J7581	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 06J7581) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.3800 500:$0.4750 250:$0.5250 100:$0.5750 50:$0.6680 25:$0.7590 1:$0.9500
SI2319DS-T1-E3 DISTI # 85W0177	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: 85W0177) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2980 18000:$0.3040 12000:$0.3100 6000:$0.3210 1:$0.3340
SI2319DS-T1-E3 DISTI # 85W0177	Vishay Intertechnologies	P CHANNEL MOSFET, -40V, 3A, TO-236, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-3A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes	54000	1:$0.2240 3000:$0.2240
SI2319DS-T1-E3 DISTI # 06J7581	Vishay Intertechnologies	P CHANNEL MOSFET, -40V, -3A, TO-236,Transistor Polarity:P Channel,Continuous Drain Current Id:-3A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes	41776	500:$0.2930 1000:$0.2930 100:$0.3170 250:$0.3170 1:$0.3460 25:$0.3460 50:$0.3460
SI2319DS-T1-E3. DISTI # 28AC2127	Vishay Intertechnologies	P-CHANNEL 40-V (D-S) MOSFET ROHS COMPLIANT: NO	0	1:$0.2790 3000:$0.2790
SI2319DS-T1-E3 DISTI # 70026411	Vishay Siliconix	TRANS MOSFET P-CH 40V 2.3A 3-PIN SOT-23T/R RoHS: Compliant	6387	1:$0.4380 25:$0.4040 100:$0.3930 250:$0.3590 500:$0.3480
SI2319DS-T1-E3 DISTI # 781-SI2319DS-T1-E3	Vishay Intertechnologies	MOSFET 40V 3.0A 1.25W 82 mohms @ 10V RoHS: Compliant	65426	1:$0.7500 10:$0.6060 100:$0.4590 500:$0.3800 1000:$0.3040 3000:$0.2750 6000:$0.2560 9000:$0.2470 24000:$0.2380
SI2319DS-T1 DISTI # 781-SI2319DS	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI2319DS-T1-E3 RoHS: Compliant	0
SI2319DS-T1-E3	Vishay Intertechnologies	P-Ch 40 V 3 A 82 mOhm 750 mW SMT Power Mosfet - SOT-23-3 RoHS: Compliant	2918Cut Tape/Mini-Reel	1:$0.3850 100:$0.3200 250:$0.3100 500:$0.3000 1500:$0.2900
SI2319DS-T1-E3	Vishay Intertechnologies	P-Ch 40 V 3 A 82 mOhm 750 mW SMT Power Mosfet - SOT-23-3 RoHS: Compliant	30000Reel	3000:$0.2600
SI2319DS-T1-E3	Vishay Siliconix		2514
SI2319DS-T1-E3	Vishay Intertechnologies		2092
SI2319DS-T1-E3	Vishay Intertechnologies		829
SI2319DS-T1-E3 DISTI # 2371827	Vishay Intertechnologies	P CHANNEL MOSFET, -40V, 3A, TO-236, FULL REEL RoHS: Compliant	54000	6000:$0.4010 9000:$0.4010 3000:$0.4370
SI2319DS-T1-E3 DISTI # 1838990RL	Vishay Intertechnologies	MOSFET,P CH,40V,2.3A,SOT23-3 RoHS: Compliant	0	3000:$0.4160 1000:$0.4580 500:$0.5730 100:$0.6930 10:$0.9150 1:$1.1500
SI2319DS-T1-E3 DISTI # 1838990	Vishay Intertechnologies	MOSFET,P CH,40V,2.3A,SOT23-3 RoHS: Compliant	54192	3000:$0.4160 1000:$0.4580 500:$0.5730 100:$0.6930 10:$0.9150 1:$1.1500
SI2319DS-T1-E3 DISTI # 1838990	Vishay Intertechnologies	MOSFET,P CH,40V,2.3A,SOT23-3	90134	500:£0.2990 250:£0.3310 100:£0.3620 10:£0.5260 1:£0.6840
SI2319DS-T1-E3 DISTI # C1S803600844247	Vishay Intertechnologies	MOSFETs RoHS: Compliant	480	250:$0.3630 100:$0.3870 50:$0.4600 10:$0.8840 1:$1.7600
SI2319DS-T1-E3 DISTI # XSFP00000090653	Vishay Siliconix	RoHS: Compliant	25576 in Stock0 on Order	25576:$0.3467 3000:$0.3714
SI2319DS-T1-E3	Vishay Intertechnologies	MOSFET 40V 3.0A 1.25W 82 mohms @ 10V RoHS: Compliant	Americas - 27000	3000:$0.2680 6000:$0.2520 12000:$0.2470 18000:$0.2420

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI2319DDS-T1-GE3 OMO.#: OMO-SI2319DDS-T1-GE3	MOSFET -40V Vds 20V Vgs SOT-23
	Mfr.#: SI2319DS-T1-E3 OMO.#: OMO-SI2319DS-T1-E3	MOSFET 40V 3.0A 1.25W 82 mohms @ 10V
	Mfr.#: SI2319DS-T1-GE3 OMO.#: OMO-SI2319DS-T1-GE3	MOSFET 40V 3.0A 1.25W 82mohm @ 10V
	Mfr.#: SI2319DS OMO.#: OMO-SI2319DS-1190	Neu und Original
	Mfr.#: SI2319DS-1-E3 OMO.#: OMO-SI2319DS-1-E3-1190	Neu und Original
	Mfr.#: SI2319DS-T1 OMO.#: OMO-SI2319DS-T1-1190	MOSFET RECOMMENDED ALT 781-SI2319DS-T1-E3
	Mfr.#: SI2319DS-T1-E3 OMO.#: OMO-SI2319DS-T1-E3-VISHAY	MOSFET P-CH 40V 2.3A SOT23-3
	Mfr.#: SI2319DS-T1-GE3 OMO.#: OMO-SI2319DS-T1-GE3-VISHAY	MOSFET P-CH 40V 2.3A SOT23-3
	Mfr.#: SI2319DDS-T1-GE3 OMO.#: OMO-SI2319DDS-T1-GE3-VISHAY	MOSFET P-CHAN 40V
	Mfr.#: SI2319DS-T1-E3-CUT TAPE OMO.#: OMO-SI2319DS-T1-E3-CUT-TAPE-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1500
Menge eingeben:

Der aktuelle Preis von SI2319DS-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,34 $~~; ~~0,34 $~~

10: ~~0,32 $~~; ~~3,19 $~~

100: ~~0,30 $~~; ~~30,24 $~~

500: ~~0,29 $~~; ~~142,80 $~~

1000: ~~0,27 $~~; ~~268,80 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI2319DS-T 4
SI2319DS 6
SI2319D 7
SI2319 14
SI231 94
SI23 561
SI2 1125

SI2319DS-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes