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IKQ75N120CH3XKSA1

IKQ75N120CH3XKSA1
Mfr. #:
IKQ75N120CH3XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors IGBT PRODUCTS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IKQ75N120CH3XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO247-3-46
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
2 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
150 A
Pd - Verlustleistung:
938 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
150 A
Marke:
Infineon-Technologien
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
240
Unterkategorie:
IGBTs
Teil # Aliase:
IKQ75N120CH3 SP001220142
Gewichtseinheit:
0.211644 oz
Tags
IKQ7, IKQ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IKQ75N120CH3XKSA1 P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 1200V 150A 938000mW 3-Pin(3+Tab) TO-247 Tube
***et Europe
High speed switching series third generation IGBT
***an P&S
High speed switching 3 generation IGBT
***i-Key
IGBT HS SW 1200V 75A TO-247-3
***ronik
IGBT 1200V 75A 2,0V TO247-3
***ark
Igbt, 1.2Kv, 150A, 938W, To-247; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:938W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, 1.2KV, 150A, 938W, TO-247; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:938W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, 1.2KV, 150A, 938W, TO-247; Corrente di Collettore CC:150A; Tensione Saturaz Collettore-Emettitore Vce(on):2V; Dissipazione di Potenza Pd:938W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode. | Summary of Features: High power density up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint; 20% lower R th(jh) compared to TO-247 3 pin; Extended collector-emitter pin creepage of 4.25 mm; Extended clip creepage due to fully encapsulated front side of the package | Benefits: Higher system power density I c increase keeping the same system thermal performance; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247; Higher reliability, extended lifetime of the device | Target Applications: Uninterruptable power suppliers (UPS); Battery Charger; Energy storage; Portable welding converter
Teil # Mfg. Beschreibung Aktie Preis
IKQ75N120CH3XKSA1
DISTI # V99:2348_17076737		Infineon Technologies AGIKQ75N120CH3XKSA1215
  • 500:$10.3829
  • 250:$10.9290
  • 100:$11.7030
  • 50:$12.5710
  • 25:$12.7780
  • 10:$13.9150
  • 1:$15.0120
IKQ75N120CH3XKSA1
DISTI # V36:1790_17076737		Infineon Technologies AGIKQ75N120CH3XKSA10
  • 240000:$8.7810
  • 120000:$8.7870
  • 24000:$10.0500
  • 2400:$12.9000
  • 240:$13.4100
IKQ75N120CH3XKSA1
DISTI # IKQ75N120CH3XKSA1-ND		Infineon Technologies AGIGBT HS SW 1200V 75A TO-247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		244In Stock
  • 720:$11.4765
  • 240:$12.9011
  • 25:$14.6424
  • 10:$15.2760
  • 1:$16.6200
IKQ75N120CH3XKSA1
DISTI # 33960069		Infineon Technologies AGIKQ75N120CH3XKSA1240
  • 2:$8.8966
IKQ75N120CH3XKSA1
DISTI # 29415937		Infineon Technologies AGIKQ75N120CH3XKSA1215
  • 1:$15.0120
IKQ75N120CH3XKSA1
DISTI # SP001220142		Infineon Technologies AGHigh speed switching series third generation IGBT (Alt: SP001220142)
RoHS: Compliant
Min Qty: 1		Europe - 220
  • 1000:€7.7900
  • 500:€8.3900
  • 100:€8.6900
  • 50:€8.9900
  • 25:€9.3900
  • 10:€9.7900
  • 1:€10.6900
IKQ75N120CH3XKSA1
DISTI # IKQ75N120CH3XKSA1		Infineon Technologies AGHigh speed switching series third generation IGBT - Rail/Tube (Alt: IKQ75N120CH3XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$9.4900
  • 1440:$9.6900
  • 960:$9.9900
  • 480:$10.3900
  • 240:$10.7900
IKQ75N120CH3XKSA1
DISTI # IKQ75N120CH3		Infineon Technologies AGHigh speed switching series third generation IGBT (Alt: IKQ75N120CH3)
RoHS: Compliant
Min Qty: 240		Asia - 0
  • 12000:$9.5417
  • 6000:$9.6640
  • 2400:$9.7895
  • 1200:$9.9183
  • 720:$10.1863
  • 480:$10.4693
  • 240:$10.7684
IKQ75N120CH3XKSA1
DISTI # 93AC7071		Infineon Technologies AGIGBT, 1.2KV, 150A, 938W, TO-247,DC Collector Current:150A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:938W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes189
  • 500:$10.3300
  • 250:$11.5100
  • 100:$12.0700
  • 50:$13.1200
  • 25:$13.3100
  • 10:$14.1000
  • 1:$15.2200
IKQ75N120CH3XKSA1
DISTI # 726-IKQ75N120CH3XKSA		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		7164
  • 1:$15.0700
  • 10:$13.9600
  • 25:$13.1800
  • 50:$12.9900
  • 100:$11.9500
  • 250:$11.4000
  • 500:$10.2300
IKQ75N120CH3XKSA1
DISTI # 1623288		Infineon Technologies AGIGBT 1200V 75A HIGHSPEED3 DIODE TO-247, TU1079
  • 600:£7.5980
  • 300:£7.7930
  • 150:£8.2930
  • 30:£8.9210
IKQ75N120CH3XKSA1
DISTI # IKQ75N120CH3		Infineon Technologies AGTransistor: IGBT,1.2kV,75A,256W,TO247-3,Series: H383
  • 10:$20.8300
  • 3:$23.5400
  • 1:$26.0100
IKQ75N120CH3XKSA1
DISTI # 2986436		Infineon Technologies AGIGBT, 1.2KV, 150A, 938W, TO-247
RoHS: Compliant		189
  • 250:$14.2200
  • 100:$14.3700
  • 50:$16.0200
  • 10:$17.1300
  • 5:$17.7500
  • 1:$18.4300
IKQ75N120CH3XKSA1
DISTI # XSKDRABS0032888		Infineon Technologies AG 
RoHS: Compliant		190 in Stock0 on Order
  • 190:$12.0100
  • 60:$12.8600
IKQ75N120CH3XKSA1
DISTI # 2986436		Infineon Technologies AGIGBT, 1.2KV, 150A, 938W, TO-247190
  • 100:£8.6600
  • 50:£9.4100
  • 10:£9.5600
  • 5:£10.9300
  • 1:£11.3100
Bild Teil # Beschreibung
IKQ75N120CS6XKSA1

Mfr.#: IKQ75N120CS6XKSA1

OMO.#: OMO-IKQ75N120CS6XKSA1

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1990
Menge eingeben:
Der aktuelle Preis von IKQ75N120CH3XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
15,07 $
15,07 $
10
13,96 $
139,60 $
25
13,18 $
329,50 $
50
12,99 $
649,50 $
100
11,95 $
1 195,00 $
250
11,40 $
2 850,00 $
500
10,23 $
5 115,00 $
1000
9,99 $
9 990,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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