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IPD65R600E6ATMA1

IPD65R600E6ATMA1
Mfr. #:
IPD65R600E6ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 700V 7.3A DPAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD65R600E6ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
7.3 A
Rds On - Drain-Source-Widerstand:
600 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
23 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
28 W
Aufbau:
Single
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
CoolMOS E6
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
11 ns
Produktart:
MOSFET
Anstiegszeit:
8 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
64 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
IPD65R600E6 SP001117096
Gewichtseinheit:
0.139332 oz
Tags
IPD65R600E6, IPD65R600E, IPD65R60, IPD65R6, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Transistor MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R
***ure Electronics
Single N-Channel 650 V 0.6 Ohm 23 nC CoolMOS™ Power Mosfet - TO-252-3
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ark
Mosfet, N Ch, 700V, 7.3A, To-252-3; Transistor Polarity:n Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Teil # Mfg. Beschreibung Aktie Preis
IPD65R600E6ATMA1
DISTI # 33356343		Infineon Technologies AGTrans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 2500:$0.6693
IPD65R600E6ATMA1
DISTI # IPD65R600E6ATMA1-ND		Infineon Technologies AGMOSFET N-CH 650V 7.3A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
  • 2500:$0.6836
IPD65R600E6ATMA1
DISTI # V36:1790_06384022		Infineon Technologies AGTrans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
    IPD65R600E6ATMA1
    DISTI # SP001117096    		Infineon Technologies AGTrans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R (Alt: SP001117096)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 2500
    • 25000:€0.5779
    • 15000:€0.6169
    • 10000:€0.6779
    • 5000:€0.7579
    • 2500:€0.9719
    IPD65R600E6ATMA1
    DISTI # IPD65R600E6ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R600E6ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.5639
    • 15000:$0.5739
    • 10000:$0.5939
    • 5000:$0.6159
    • 2500:$0.6389
    IPD65R600E6ATMA1
    DISTI # 726-IPD65R600E6ATMA1    		Infineon Technologies AGMOSFET N-Ch 700V 7.3A DPAK-20
    • 1:$1.4500
    • 10:$1.2400
    • 100:$0.9550
    • 500:$0.8440
    • 1000:$0.6660
    • 2500:$0.5910
    • 10000:$0.5690
    IPD65R600E6ATMA1
    DISTI # 2443437    		Infineon Technologies AGMOSFET, N CH, 700V, 7.3A, TO-252-3
    RoHS: Compliant    		0
    • 2500:$1.0000
    • 1000:$1.0200
    • 500:$1.3000
    • 100:$1.4700
    • 10:$1.9200
    • 1:$2.2500
    IPD65R600E6ATMA1
    DISTI # 2443437    		Infineon Technologies AGMOSFET, N CH, 700V, 7.3A, TO-252-3
    RoHS: Compliant    		0
    • 500:£0.6500
    • 250:£0.6940
    • 100:£0.7360
    • 25:£0.9530
    • 5:£1.0500
    IPD65R600E6ATMA1
    DISTI # XSKDRABS0034511    		Infineon Technologies AG 
    RoHS: Compliant    		7500 in Stock0 on Order
    • 7500:$0.8363
    • 2500:$0.8960
    Bild Teil # Beschreibung
    IPD65R600C6

    Mfr.#: IPD65R600C6

    OMO.#: OMO-IPD65R600C6

    		 MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6
    IPD65R600E6ATMA1

    Mfr.#: IPD65R600E6ATMA1

    OMO.#: OMO-IPD65R600E6ATMA1

    		 MOSFET N-Ch 700V 7.3A DPAK-2
    IPD65R600C6BTMA1

    Mfr.#: IPD65R600C6BTMA1

    OMO.#: OMO-IPD65R600C6BTMA1

    		 MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6
    IPD65R600C6ATMA1

    Mfr.#: IPD65R600C6ATMA1

    OMO.#: OMO-IPD65R600C6ATMA1-INFINEON-TECHNOLOGIES

    		 LOW POWER_LEGACY
    IPD65R600E6BTMA1

    Mfr.#: IPD65R600E6BTMA1

    OMO.#: OMO-IPD65R600E6BTMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 7.3A TO252-3
    IPD65R600C6

    Mfr.#: IPD65R600C6

    OMO.#: OMO-IPD65R600C6-1190

    		 Trans MOSFET N-CH 700V 7.3A 3-Pin TO-252 T/R (Alt: SP000745020)
    IPD65R600C6BTMA1

    Mfr.#: IPD65R600C6BTMA1

    OMO.#: OMO-IPD65R600C6BTMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 7.3A TO252
    IPD65R600E

    Mfr.#: IPD65R600E

    OMO.#: OMO-IPD65R600E-1190

    		 MOSFET, N CH, 700V, 7.3A, TO-252-3
    IPD65R600E6

    Mfr.#: IPD65R600E6

    OMO.#: OMO-IPD65R600E6-1190

    		 Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R (Alt: SP000800216)
    IPD65R600E6ATMA1

    Mfr.#: IPD65R600E6ATMA1

    OMO.#: OMO-IPD65R600E6ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-Ch 700V 7.3A DPAK-2
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von IPD65R600E6ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,45 $
    1,45 $
    10
    1,24 $
    12,40 $
    100
    0,96 $
    95,50 $
    500
    0,84 $
    422,00 $
    1000
    0,67 $
    666,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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