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HGTD7N60C3S9A

HGTD7N60C3S9A
Mfr. #:
HGTD7N60C3S9A
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors 14a 600V N-Ch IGBT UFS Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTD7N60C3S9A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
E
Technologie:
Si
Paket / Koffer:
TO-252AA-3
Montageart:
SMD/SMT
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.6 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
14 A
Pd - Verlustleistung:
60 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
HGTD7N60C3S
Verpackung:
Spule
Kontinuierlicher Kollektorstrom Ic Max:
14 A
Höhe:
2.3 mm
Länge:
6.6 mm
Breite:
6.1 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
14 A
Gate-Emitter-Leckstrom:
+/- 250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
2500
Unterkategorie:
IGBTs
Teil # Aliase:
HGTD7N60C3S9A_NL
Gewichtseinheit:
0.009184 oz
Tags
HGTD7N60C3S, HGTD7N60C, HGTD7, HGTD, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 600V 14A 60000mW 3-Pin(2+Tab) DPAK T/R
***p One Stop Global
Trans IGBT Chip N-CH 600V 14A 3-Pin(2+Tab) DPAK T/R
***inecomponents.com
POWER IGBT UFS 7A 600V TF=275 MAX TO-252 TAPE AND REEL
***ser
IGBTs 14a, 600V, N-Ch IGBT UFS Series
***Semiconductor
14A,600V, UFS Series N-Channel IGBTs
***i-Key
IGBT UFS N-CH 600V 14A TO-252AA
*** Source Electronics
IGBT 600V 14A 60W TO252AA
Teil # Mfg. Beschreibung Aktie Preis
HGTD7N60C3S9A
DISTI # 29731087		ON SemiconductorPTPIGBT TO252 7A 600V2500
  • 2500:$1.0127
HGTD7N60C3S9A
DISTI # HGTD7N60C3S9AOSCT-ND		ON SemiconductorIGBT 600V 14A 60W TO252AA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2497In Stock
  • 1000:$1.0047
  • 500:$1.2047
  • 100:$1.4580
  • 10:$1.8050
  • 1:$2.0100
HGTD7N60C3S9A
DISTI # HGTD7N60C3S9AOSDKR-ND		ON SemiconductorIGBT 600V 14A 60W TO252AA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2497In Stock
  • 1000:$1.0047
  • 500:$1.2047
  • 100:$1.4580
  • 10:$1.8050
  • 1:$2.0100
HGTD7N60C3S9A
DISTI # HGTD7N60C3S9AOSTR-ND		ON SemiconductorIGBT 600V 14A 60W TO252AA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
  • 5000:$0.8999
  • 2500:$0.9107
HGTD7N60C3S9A
DISTI # C1S541901524007		ON SemiconductorTrans IGBT Chip N-CH 600V 14A 60000mW 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$0.8710
HGTD7N60C3S9A
DISTI # HGTD7N60C3S9A		ON SemiconductorTrans IGBT Chip N-CH 600V 14A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: HGTD7N60C3S9A)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.7349
  • 5000:$0.7299
  • 10000:$0.7209
  • 15000:$0.7119
  • 25000:$0.6939
HGTD7N60C3S9AFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA
RoHS: Compliant		249
  • 1000:$1.3100
  • 500:$1.3800
  • 100:$1.4300
  • 25:$1.5000
  • 1:$1.6100
HGTD7N60C3S9A
DISTI # 512-HGTD7N60C3S9A		ON SemiconductorIGBT Transistors 14a 600V N-Ch IGBT UFS Series
RoHS: Compliant		0
    Bild Teil # Beschreibung
    HGTD7N60C3S9A

    Mfr.#: HGTD7N60C3S9A

    OMO.#: OMO-HGTD7N60C3S9A

    		 IGBT Transistors 14a 600V N-Ch IGBT UFS Series
    HGTD7N60C3S9A

    Mfr.#: HGTD7N60C3S9A

    OMO.#: OMO-HGTD7N60C3S9A-ON-SEMICONDUCTOR

    		 IGBT Transistors 14a 600V N-Ch IGBT UFS Series
    HGTD7N60A4S

    Mfr.#: HGTD7N60A4S

    OMO.#: OMO-HGTD7N60A4S-1190

    		 IGBT Transistors TO-252
    HGTD7N60B3

    Mfr.#: HGTD7N60B3

    OMO.#: OMO-HGTD7N60B3-1190

    		 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA
    HGTD7N60B3S

    Mfr.#: HGTD7N60B3S

    OMO.#: OMO-HGTD7N60B3S-1190

    		 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA
    HGTD7N60C3

    Mfr.#: HGTD7N60C3

    OMO.#: OMO-HGTD7N60C3-1190

    		 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA
    HGTD7N60C3S

    Mfr.#: HGTD7N60C3S

    OMO.#: OMO-HGTD7N60C3S-1190

    		 - Bulk (Alt: HGTD7N60C3S)
    HGTD7N60C3S9A-NL

    Mfr.#: HGTD7N60C3S9A-NL

    OMO.#: OMO-HGTD7N60C3S9A-NL-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von HGTD7N60C3S9A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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