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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGTD7N60B3 | Harris Semiconductor | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA RoHS: Not Compliant | 900 |
|
| HGTD7N60B3S | Harris Semiconductor | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA RoHS: Not Compliant | 703 |
|
| HGTD7N60B3 | HARTING Technology Group | RoHS: Not Compliant | Europe - 600 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: HGTD7N60C3S9A OMO.#: OMO-HGTD7N60C3S9A |
IGBT Transistors 14a 600V N-Ch IGBT UFS Series |
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Mfr.#: HGTD7N60C3S9A |
IGBT Transistors 14a 600V N-Ch IGBT UFS Series |
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Mfr.#: HGTD7N60A4S OMO.#: OMO-HGTD7N60A4S-1190 |
IGBT Transistors TO-252 |
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Mfr.#: HGTD7N60B3 OMO.#: OMO-HGTD7N60B3-1190 |
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA |
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Mfr.#: HGTD7N60B3S OMO.#: OMO-HGTD7N60B3S-1190 |
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA |
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Mfr.#: HGTD7N60C3 OMO.#: OMO-HGTD7N60C3-1190 |
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA |
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Mfr.#: HGTD7N60C3S OMO.#: OMO-HGTD7N60C3S-1190 |
- Bulk (Alt: HGTD7N60C3S) |
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Mfr.#: HGTD7N60C3S9A-NL OMO.#: OMO-HGTD7N60C3S9A-NL-1190 |
Neu und Original |
