HGTD7N60B3S

HGTD7N60B3S
Mfr. #:
HGTD7N60B3S
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTD7N60B3S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGTD7, HGTD, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key Marketplace
14A, 600V, UFS N-CHANNEL IGBT
Teil # Mfg. Beschreibung Aktie Preis
HGTD7N60B3SHarris SemiconductorInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA
RoHS: Not Compliant
703
  • 1000:$0.6800
  • 500:$0.7200
  • 100:$0.7500
  • 25:$0.7800
  • 1:$0.8400
Bild Teil # Beschreibung
HGTD7N60C3S9A

Mfr.#: HGTD7N60C3S9A

OMO.#: OMO-HGTD7N60C3S9A

IGBT Transistors 14a 600V N-Ch IGBT UFS Series
HGTD7N60C3S9A

Mfr.#: HGTD7N60C3S9A

OMO.#: OMO-HGTD7N60C3S9A-ON-SEMICONDUCTOR

IGBT Transistors 14a 600V N-Ch IGBT UFS Series
HGTD7N60A4S

Mfr.#: HGTD7N60A4S

OMO.#: OMO-HGTD7N60A4S-1190

IGBT Transistors TO-252
HGTD7N60B3

Mfr.#: HGTD7N60B3

OMO.#: OMO-HGTD7N60B3-1190

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA
HGTD7N60B3S

Mfr.#: HGTD7N60B3S

OMO.#: OMO-HGTD7N60B3S-1190

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA
HGTD7N60C3

Mfr.#: HGTD7N60C3

OMO.#: OMO-HGTD7N60C3-1190

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA
HGTD7N60C3S

Mfr.#: HGTD7N60C3S

OMO.#: OMO-HGTD7N60C3S-1190

- Bulk (Alt: HGTD7N60C3S)
HGTD7N60C3S9A-NL

Mfr.#: HGTD7N60C3S9A-NL

OMO.#: OMO-HGTD7N60C3S9A-NL-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von HGTD7N60B3S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,02 $
1,02 $
10
0,97 $
9,69 $
100
0,92 $
91,80 $
500
0,87 $
433,50 $
1000
0,82 $
816,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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