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SIHP17N60D-E3

SIHP17N60D-E3
Mfr. #:
SIHP17N60D-E3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET 600V 340mOhm@10V 17A N-Ch D-SRS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHP17N60D-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHP17N60D-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHP17N6, SIHP17, SIHP1, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 17A 3-Pin TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***S
D-SERIES POWER MOSFET 600V TO-220AB
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Teil # Mfg. Beschreibung Aktie Preis
SIHP17N60D-E3
DISTI # SIHP17N60D-E3-ND		Vishay SiliconixMOSFET N-CH 600V 17A TO-220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.8326
SIHP17N60D-E3
DISTI # SIHP17N60D-E3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP17N60D-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.6900
  • 2000:$1.5900
  • 4000:$1.5900
  • 6000:$1.4900
  • 10000:$1.4900
SIHP17N60D-E3
DISTI # 78-SIHP17N60D-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant		0
  • 1:$3.3400
  • 10:$2.7700
  • 100:$2.2800
  • 250:$2.2100
  • 500:$1.9800
  • 1000:$1.6700
  • 2500:$1.5900
  • 5000:$1.5300
SIHP17N60DE3Vishay IntertechnologiesPower Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		Europe - 500
    SIHP17N60D-E3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
    RoHS: Compliant    		Americas -
      Bild Teil # Beschreibung
      SIHP17N80E-GE3

      Mfr.#: SIHP17N80E-GE3

      OMO.#: OMO-SIHP17N80E-GE3

      		 MOSFET 800V Vds 30V Vgs TO-220AB
      SIHP17N60D-E3

      Mfr.#: SIHP17N60D-E3

      OMO.#: OMO-SIHP17N60D-E3

      		 MOSFET 600V Vds 30V Vgs TO-220AB
      SIHP17N60D-GE3

      Mfr.#: SIHP17N60D-GE3

      OMO.#: OMO-SIHP17N60D-GE3

      		 MOSFET 600V Vds 30V Vgs TO-220AB
      SIHP17N60D-E3

      Mfr.#: SIHP17N60D-E3

      OMO.#: OMO-SIHP17N60D-E3-VISHAY

      		 IGBT Transistors MOSFET 600V 340mOhm@10V 17A N-Ch D-SRS
      SIHP17N60D-GE3

      Mfr.#: SIHP17N60D-GE3

      OMO.#: OMO-SIHP17N60D-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 600V 17A 277.8W 340mOhm @10V
      SIHP17N80E-GE3

      Mfr.#: SIHP17N80E-GE3

      OMO.#: OMO-SIHP17N80E-GE3-VISHAY

      		 MOSFET N-CH 800V 15A TO220AB
      SIHP17N60D

      Mfr.#: SIHP17N60D

      OMO.#: OMO-SIHP17N60D-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von SIHP17N60D-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,24 $
      2,24 $
      10
      2,12 $
      21,23 $
      100
      2,01 $
      201,15 $
      500
      1,90 $
      949,90 $
      1000
      1,79 $
      1 788,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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