IKQ40N120CT2XKSA1

IKQ40N120CT2XKSA1
Mfr. #:
IKQ40N120CT2XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors IGBT PRODUCTS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IKQ40N120CT2XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO247-3-46
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
1.75 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
500 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
80 A
Marke:
Infineon-Technologien
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
240
Unterkategorie:
IGBTs
Teil # Aliase:
IKQ40N120CT2 SP001272732
Gewichtseinheit:
0.211644 oz
Tags
IKQ4, IKQ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IKQ40N120CT2XKSA1 P-Channel IGBT, 80 A 1200 V, 3-Pin TO-247
***i-Key
IGBT HS SW 1200V 40A TO-247-3
***ronik
IGBT 1200V 40A 1,75V TO247-3
***et
IGBT PRODUCTS
***ineon
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode. | Summary of Features: High power density up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint; 20% lower R th(jh) compared to TO-247 3 pin; Extended collector-emitter pin creepage of 4.25 mm; Extended clip creepage due to fully encapsulated front side of the package | Benefits: Higher system power density I c increase keeping the same system thermal performance; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247; Higher reliability, extended lifetime of the device | Target Applications: Motor control; Industrial drives; Other low speed hard switching applications (f sw <20kHz)
Teil # Mfg. Beschreibung Aktie Preis
IKQ40N120CT2XKSA1
DISTI # IKQ40N120CT2XKSA1
Infineon Technologies AGIGBTs - Rail/Tube (Alt: IKQ40N120CT2XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$5.5900
  • 1440:$5.6900
  • 960:$5.8900
  • 480:$6.0900
  • 240:$6.2900
IKQ40N120CT2XKSA1
DISTI # 726-IKQ40N120CT2XKSA
Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant
328
  • 1:$10.5500
  • 10:$9.5400
  • 25:$9.1000
  • 100:$7.9000
  • 250:$7.5400
  • 500:$6.8800
IKQ40N120CT2XKSA1
DISTI # 1623283
Infineon Technologies AGIGBT 1200V 40A TRENCHSTOP2 DIODE TO-247, TU194
  • 600:£4.0310
  • 300:£4.3190
  • 150:£4.6510
  • 30:£5.0390
IKQ40N120CT2XKSA1
DISTI # IKQ40N120CT2
Infineon Technologies AGTransistor: IGBT,1.2kV,40A,133W,TO247-326
  • 10:$6.5900
  • 3:$7.4700
  • 1:$8.3000
Bild Teil # Beschreibung
FGH40T120SQDNL4

Mfr.#: FGH40T120SQDNL4

OMO.#: OMO-FGH40T120SQDNL4

IGBT Transistors IGBT 1200V 40A UFS
NGTB40N120FL3WG

Mfr.#: NGTB40N120FL3WG

OMO.#: OMO-NGTB40N120FL3WG

IGBT Transistors IGBT 1200V 40A FS3 SOLAR/
NGTB40N120S3WG

Mfr.#: NGTB40N120S3WG

OMO.#: OMO-NGTB40N120S3WG

IGBT Transistors IGBT 1200V 40A FS3 LOW VF
STGW25M120DF3

Mfr.#: STGW25M120DF3

OMO.#: OMO-STGW25M120DF3

IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
STGW40H120DF2

Mfr.#: STGW40H120DF2

OMO.#: OMO-STGW40H120DF2

IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
LM2937IMPX-15/NOPB

Mfr.#: LM2937IMPX-15/NOPB

OMO.#: OMO-LM2937IMPX-15-NOPB

LDO Voltage Regulators 500 mA LDO Reg
STGW40H120DF2

Mfr.#: STGW40H120DF2

OMO.#: OMO-STGW40H120DF2-STMICROELECTRONICS

IGBT 1200V 40A HS TO-247
STGW25M120DF3

Mfr.#: STGW25M120DF3

OMO.#: OMO-STGW25M120DF3-STMICROELECTRONICS

IGBT 1200V 50A 375W
LF411CP

Mfr.#: LF411CP

OMO.#: OMO-LF411CP-TEXAS-INSTRUMENTS

Operational Amplifiers - Op Amps JFET In Precision
LM2937IMPX-15/NOPB

Mfr.#: LM2937IMPX-15/NOPB

OMO.#: OMO-LM2937IMPX-15-NOPB-TEXAS-INSTRUMENTS

LDO Voltage Regulators 500 mA LDO Reg
Verfügbarkeit
Aktie:
318
Auf Bestellung:
2301
Menge eingeben:
Der aktuelle Preis von IKQ40N120CT2XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
10,55 $
10,55 $
10
9,54 $
95,40 $
25
9,10 $
227,50 $
100
7,90 $
790,00 $
250
7,54 $
1 885,00 $
500
6,88 $
3 440,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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