SCT10N120H

SCT10N120H
Mfr. #:
SCT10N120H
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SCT10N120H Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SCT10N120H Mehr Informationen SCT10N120H Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
Technologie:
SiC
Montageart:
Durchgangsloch
Paket / Koffer:
HiP247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1200 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
690 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.8 V
Vgs - Gate-Source-Spannung:
- 10 V to 25 V
Qg - Gate-Ladung:
22 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 200 C
Pd - Verlustleistung:
150 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Serie:
SCT10N120H
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
17 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
14 ns
Typische Einschaltverzögerungszeit:
7 ns
Tags
SCT10, SCT1, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Teil # Mfg. Beschreibung Aktie Preis
SCT10N120H
DISTI # SCT10N120H
STMicroelectronics- Tape and Reel (Alt: SCT10N120H)
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$5.4900
  • 6000:$5.6900
  • 4000:$5.8900
  • 2000:$6.1900
  • 1000:$6.4900
SCT10N120H
DISTI # 59AC7246
STMicroelectronicsPTD WBG & POWER RF0
  • 1:$5.4800
SCT10N120H
DISTI # 511-SCT10N120H
STMicroelectronicsMOSFET0
  • 1000:$5.9200
Bild Teil # Beschreibung
SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120

MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
SCT10N120H

Mfr.#: SCT10N120H

OMO.#: OMO-SCT10N120H

MOSFET
SCT10N120H

Mfr.#: SCT10N120H

OMO.#: OMO-SCT10N120H-1190

- Tape and Reel (Alt: SCT10N120H)
SCT1000N170

Mfr.#: SCT1000N170

OMO.#: OMO-SCT1000N170-1190

HIP247 IN LINE
SCT1004T-470M

Mfr.#: SCT1004T-470M

OMO.#: OMO-SCT1004T-470M-1190

Neu und Original
SCT102BC

Mfr.#: SCT102BC

OMO.#: OMO-SCT102BC-1190

Neu und Original
SCT105K122D3B23-F

Mfr.#: SCT105K122D3B23-F

OMO.#: OMO-SCT105K122D3B23-F-1190

FILM CAPACITOR
SCT105K122D3B31-F

Mfr.#: SCT105K122D3B31-F

OMO.#: OMO-SCT105K122D3B31-F-1190

FILM CAPACITOR
SCT105K202A3S25

Mfr.#: SCT105K202A3S25

OMO.#: OMO-SCT105K202A3S25-1190

Neu und Original
SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120-STMICROELECTRONICS

MOSFET N-CH 1.2KV TO247-3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von SCT10N120H dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1000
5,92 $
5 920,00 $
Beginnen mit
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