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IPW65R190E6

IPW65R190E6
Mfr. #:
IPW65R190E6
Hersteller:
Rochester Electronics, LLC
Beschreibung:
IGBT Transistors MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS E6
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPW65R190E6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
CoolMOS E6
Verpackung
Rohr
Teil-Aliasnamen
IPW65R190E6FKSA1 IPW65R190E6XK SP000863906
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Handelsname
CoolMOS
Paket-Koffer
TO-247-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
151 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
10 ns
Anstiegszeit
12 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
20.2 A
Vds-Drain-Source-Breakdown-Voltage
700 V
Rds-On-Drain-Source-Widerstand
190 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
133 nS
Qg-Gate-Ladung
73 nC
Tags
IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 20.2A Automotive 3-Pin(3+Tab) TO-247 Tube
***ukat
N-Ch 650V 20,2A 151W 0,19R TO247
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Teil # Mfg. Beschreibung Aktie Preis
IPW65R190E6
DISTI # 30577718		Infineon Technologies AGTrans MOSFET N-CH 700V 20.8A 3-Pin(3+Tab) TO-247
RoHS: Compliant		240
  • 100:$1.8487
  • 14:$1.8742
IPW65R190E6FKSA1
DISTI # IPW65R190E6FKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 20.2A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
    IPW65R190E6
    DISTI # IPW65R190E6    		Infineon Technologies AGTrans MOSFET N-CH 700V 20.8A 3-Pin TO-247 Tube - Bulk (Alt: IPW65R190E6)
    Min Qty: 188
    Container: Bulk    		Americas - 0
    • 1880:$1.5900
    • 564:$1.6900
    • 940:$1.6900
    • 376:$1.7900
    • 188:$1.8900
    IPW65R190E6FKSA1
    DISTI # IPW65R190E6FKSA1    		Infineon Technologies AG- Bulk (Alt: IPW65R190E6FKSA1)
    Min Qty: 169
    Container: Bulk    		Americas - 0
    • 1690:$1.7900
    • 507:$1.8900
    • 845:$1.8900
    • 338:$1.9900
    • 169:$2.0900
    IPW65R190E6
    DISTI # 726-IPW65R190E6    		Infineon Technologies AGMOSFET N-Ch 700V 20.2A TO247-3 CoolMOS E6
    RoHS: Compliant    		210
    • 1:$3.8300
    • 10:$3.2600
    • 100:$2.8200
    IPW65R190E6Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant    		539
    • 1000:$1.7500
    • 500:$1.8400
    • 100:$1.9200
    • 25:$2.0000
    • 1:$2.1500
    IPW65R190E6FKSA1Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant    		2400
    • 1000:$1.9500
    • 500:$2.0500
    • 100:$2.1300
    • 25:$2.2300
    • 1:$2.4000
    IPW65R190E6FKSA1
    DISTI # 8977649P    		Infineon Technologies AGMOSFET N-CH 700V 20.8A COOLMOS TO247, TU42
    • 150:£1.9400
    • 60:£2.0930
    • 30:£2.2430
    • 6:£2.4400
    IPW65R190E6FKSA1
    DISTI # IPW65R190E6    		Infineon Technologies AGN-Ch 650V 20,2A 151W 0,19R TO247
    RoHS: Compliant    		153
    • 1:€6.0300
    • 10:€3.0300
    • 50:€1.5300
    • 100:€1.4600
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    IPW65R190CFDAFKSA1

    Mfr.#: IPW65R190CFDAFKSA1

    OMO.#: OMO-IPW65R190CFDAFKSA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 650V 17.5A TO247-3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von IPW65R190E6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,38 $
    2,38 $
    10
    2,27 $
    22,66 $
    100
    2,15 $
    214,65 $
    500
    2,03 $
    1 013,65 $
    1000
    1,91 $
    1 908,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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