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SPB02N60S5

SPB02N60S5
Mfr. #:
SPB02N60S5
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SPB02N60S5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INF
Produktkategorie
FETs - Einzeln
Tags
SPB02N60S, SPB02N60, SPB02N, SPB02, SPB0, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Stockers USA
1.8 A 600 V 3 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***i-Key
MOSFET N-CH 600V 1.8A TO-263
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***p One Stop
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
***ment14 APAC
MOSFET, N, 600V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):3ohm; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Transistor Case Style:D2-PAK; Package / Case:D2-PAK; Power Dissipation Pd:25W; Pulse Current Idm:5.4A; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds:600V; Voltage Vds Typ:650V; Voltage Vgs Rds on Measurement:10V
***et
Trans MOSFET N-CH 650V 1.8A 3-Pin TO-263 T/R
***i-Key Marketplace
MOSFET N-CH 650V 1.8A TO263-3
*** Electronics
N-CHANNEL POWER MOSFET
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Teil # Mfg. Beschreibung Aktie Preis
SPB02N60S5ATMA1
DISTI # SPB02N60S5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 600V 1.8A TO-263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		178In Stock
  • 100:$0.8994
  • 10:$1.1380
  • 1:$1.2800
SPB02N60S5ATMA1
DISTI # SPB02N60S5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 600V 1.8A TO-263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		178In Stock
  • 100:$0.8994
  • 10:$1.1380
  • 1:$1.2800
SPB02N60S5ATMA1
DISTI # SPB02N60S5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 1.8A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    SPB02N60S5Infineon Technologies AGPower Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		700
    • 1000:$0.3400
    • 500:$0.3600
    • 100:$0.3800
    • 25:$0.3900
    • 1:$0.4200
    SPB02N60S5
    DISTI # 726-SPB02N60S5    		Infineon Technologies AGMOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS S5
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      SPB02N60C3

      Mfr.#: SPB02N60C3

      OMO.#: OMO-SPB02N60C3-126

      		 IGBT Transistors MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3
      SPB021N04N

      Mfr.#: SPB021N04N

      OMO.#: OMO-SPB021N04N-1190

      		 Neu und Original
      SPB02N60C3ATMA1

      Mfr.#: SPB02N60C3ATMA1

      OMO.#: OMO-SPB02N60C3ATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 650V 1.8A D2PAK
      SPB02N60S5

      Mfr.#: SPB02N60S5

      OMO.#: OMO-SPB02N60S5-1190

      		 Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      SPB02N60S5ATMA1

      Mfr.#: SPB02N60S5ATMA1

      OMO.#: OMO-SPB02N60S5ATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 600V 1.8A TO-263
      SPB02N60S5E3045A

      Mfr.#: SPB02N60S5E3045A

      OMO.#: OMO-SPB02N60S5E3045A-1190

      		 Neu und Original
      SPB02N6OC3

      Mfr.#: SPB02N6OC3

      OMO.#: OMO-SPB02N6OC3-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von SPB02N60S5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,49 $
      0,49 $
      10
      0,47 $
      4,70 $
      100
      0,45 $
      44,54 $
      500
      0,42 $
      210,30 $
      1000
      0,40 $
      395,90 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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