SPB02N60C3

SPB02N60C3
Mfr. #:
SPB02N60C3
Hersteller:
Rochester Electronics, LLC
Beschreibung:
IGBT Transistors MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SPB02N60C3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
FETs - Einzeln
Tags
SPB02N60, SPB02N, SPB02, SPB0, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R
***ical
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 600V 1.8A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 650V 1.8A D2PAK
***ment14 APAC
Prices include import duty and tax.
***ark
MOSFET, N, 600V, D2-PAK; Transistor type:Enhancement; Voltage, Vds typ:650V; Current, Id cont:1.8A; Resistance, Rds on:3ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:3V; Case style:D2-PAK (TO-263); Current, Idm RoHS Compliant: Yes
***nell
MOSFET, N, 600V, D2-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:1.8A; Resistance, Rds On:3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:D2-PAK; Termination Type:SMD; Current, Idm Pulse:5.4A; Power, Pd:25W; Voltage, Vds:600V; Voltage, Vds Max:600V
Teil # Mfg. Beschreibung Aktie Preis
SPB02N60C3
DISTI # 30577100
Infineon Technologies AGTrans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-263
RoHS: Compliant
40
  • 31:$0.7778
SPB02N60C3ATMA1
DISTI # SPB02N60C3ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 650V 1.8A D2PAK
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    SPB02N60C3
    DISTI # C1S322000116018
    Infineon Technologies AGTrans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    40
    • 10:$0.6100
    • 5:$0.6540
    SPB02N60C3
    DISTI # SP000013516
    Infineon Technologies AGTrans MOSFET N-CH 600V 1.8A 3-Pin TO-263 T/R (Alt: SP000013516)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 15
    • 1000:€0.8069
    • 2000:€0.6769
    • 4000:€0.5649
    • 6000:€0.4919
    • 10000:€0.4609
    SPB02N60C3
    DISTI # 726-SPB02N60C3
    Infineon Technologies AGMOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3
    RoHS: Compliant
    0
      SPB02N60C3Infineon Technologies AGPower Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      11500
      • 1000:$0.5200
      • 500:$0.5400
      • 100:$0.5600
      • 25:$0.5900
      • 1:$0.6300
      SPB02N60C3ATMA1Infineon Technologies AGPower Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      36000
      • 1000:$0.6500
      • 500:$0.6800
      • 100:$0.7100
      • 25:$0.7400
      • 1:$0.8000
      SPB02N60C3
      DISTI # 1471779
      Infineon Technologies AG 
      RoHS: Compliant
      0
      • 1:$1.7300
      Bild Teil # Beschreibung
      SPB02N60C3

      Mfr.#: SPB02N60C3

      OMO.#: OMO-SPB02N60C3-126

      IGBT Transistors MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3
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      Mfr.#: SPB021N04N

      OMO.#: OMO-SPB021N04N-1190

      Neu und Original
      SPB02N60C3ATMA1

      Mfr.#: SPB02N60C3ATMA1

      OMO.#: OMO-SPB02N60C3ATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 650V 1.8A D2PAK
      SPB02N60S5

      Mfr.#: SPB02N60S5

      OMO.#: OMO-SPB02N60S5-1190

      Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      SPB02N60S5ATMA1

      Mfr.#: SPB02N60S5ATMA1

      OMO.#: OMO-SPB02N60S5ATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 600V 1.8A TO-263
      SPB02N60S5E3045A

      Mfr.#: SPB02N60S5E3045A

      OMO.#: OMO-SPB02N60S5E3045A-1190

      Neu und Original
      SPB02N6OC3

      Mfr.#: SPB02N6OC3

      OMO.#: OMO-SPB02N6OC3-1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von SPB02N60C3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,69 $
      0,69 $
      10
      0,66 $
      6,56 $
      100
      0,62 $
      62,10 $
      500
      0,59 $
      293,25 $
      1000
      0,55 $
      552,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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