We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SPB02N60C3ATMA1 DISTI # SPB02N60C3ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 650V 1.8A D2PAK Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPB02N60C3 DISTI # SPB02N60C3 | Infineon Technologies AG | Trans MOSFET N-CH 600V 1.8A 3-Pin TO-263 T/R - Bulk (Alt: SPB02N60C3) RoHS: Not Compliant Min Qty: 715 Container: Bulk | Americas - 0 | |
| SPB02N60C3ATMA1 DISTI # SPB02N60C3ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 650V 1.8A 3-Pin TO-263 T/R - Bulk (Alt: SPB02N60C3ATMA1) RoHS: Compliant Min Qty: 569 Container: Bulk | Americas - 0 |
|
| SPB02N60C3 | Infineon Technologies AG | CoolMOS, 1.8A I(D), 600V, 3ohm, N-Channel, Power MOSFET RoHS: Compliant | 11500 |
|
| SPB02N60C3ATMA1 | Infineon Technologies AG | CoolMOS, 1.8A I(D), 600V, 3ohm, N-Channel, Power MOSFET RoHS: Compliant | 36000 |
|
| SPB02N60C3 DISTI # 1471779 | Infineon Technologies AG | RoHS: Compliant | 0 |
|
| SPB02N60C3 DISTI # C1S322000116018 | Infineon Technologies AG | Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant Min Qty: 5 Container: Cut Tape | 40 |
|
| SPB02N60C3 | ISC | D²PAK/TO-263 | 5000 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SPB02N60C3 OMO.#: OMO-SPB02N60C3-126 |
IGBT Transistors MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3 |
|
|
Mfr.#: SPB021N04N OMO.#: OMO-SPB021N04N-1190 |
Neu und Original |
|
Mfr.#: SPB02N60C3ATMA1 |
MOSFET N-CH 650V 1.8A D2PAK |
|
|
Mfr.#: SPB02N60S5 OMO.#: OMO-SPB02N60S5-1190 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
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Mfr.#: SPB02N60S5ATMA1 |
MOSFET N-CH 600V 1.8A TO-263 |
|
|
Mfr.#: SPB02N60S5E3045A OMO.#: OMO-SPB02N60S5E3045A-1190 |
Neu und Original |
|
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Mfr.#: SPB02N6OC3 OMO.#: OMO-SPB02N6OC3-1190 |
Neu und Original |