FS150R12KE3G

FS150R12KE3G
Mfr. #:
FS150R12KE3G
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Modules 1200V 150A 3-PHASE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FS150R12KE3G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
EUPEC
Produktkategorie
Modul
Produkt
IGBT Silizium Module
Montageart
Schraube
Paket-Koffer
EconoPACK+
Aufbau
Verhexen
Pd-Verlustleistung
695 W
Maximale-Betriebstemperatur
+ 125 C
Mindest-Betriebstemperatur
- 40 C
Kollektor-Emitter-Spannung-VCEO-Max
1200 V
Kollektor-Emitter-Sättigungsspannung
1.7 V
Kontinuierlicher Kollektorstrom-bei-25-C
200 A
Gate-Emitter-Leckstrom
400 nA
Maximale Gate-Emitter-Spannung
+/- 20 V
Tags
FS150R12KE, FS150R12K, FS150R12, FS150R1, FS150R, FS150, FS15, FS1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBT - Standard Modules 1200V 150A 3-PHASE
***omponent
EconoPACK with trench/fieldstop IGBT3 and EmCon High Efficiency diode
Teil # Mfg. Beschreibung Aktie Preis
FS150R12KE3GBOSA1
DISTI # V99:2348_18205074
Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 200A 29-Pin Tray
RoHS: Compliant
8
  • 100:$364.4300
  • 25:$372.5100
  • 10:$381.6400
  • 1:$382.7200
FS150R12KE3GBOSA1
DISTI # FS150R12KE3GBOSA1-ND
Infineon Technologies AGMOD IGBT MED PWR ECONOPP-1
RoHS: Compliant
Min Qty: 4
Container: Tray
Limited Supply - Call
  • 4:$323.5950
EB01-FS150R12KE3G
DISTI # EB01-FS150R12KE3G-ND
Power IntegrationsMODULE GATE DVR P&P SCALE 1
RoHS: Compliant
Container: Bulk
Limited Supply - Call
    FS150R12KE3GBOSA1
    DISTI # 26198728
    Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 200A 29-Pin Tray
    RoHS: Compliant
    8
    • 1:$379.9400
    FS150R12KE3GBOSA1
    DISTI # FS150R12KE3GBOSA1
    Infineon Technologies AGMEDIUM POWER ECONO - Trays (Alt: FS150R12KE3GBOSA1)
    RoHS: Compliant
    Min Qty: 4
    Container: Tray
    Americas - 0
    • 4:$312.6900
    • 8:$301.3900
    • 16:$290.4900
    • 24:$280.6900
    • 40:$275.6900
    FS150R12KE3G
    DISTI # 641-FS150R12KE3G
    Infineon Technologies AGIGBT Modules 1200V 150A 3-PHASE
    RoHS: Not compliant
    2
    • 1:$314.6800
    • 5:$307.1100
    • 10:$299.4800
    • 25:$295.2900
    EB01-FS150R12KE3G
    DISTI # 869-EB01-FS150R12KE3
    Power IntegrationsPower Management IC Development Tools IGBT Driver HVIC PI Gate Driver ONLY
    RoHS: Not compliant
    0
      FS150R12KE3GBOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel
      RoHS: Compliant
      4
      • 1000:$240.1600
      • 500:$252.8000
      • 100:$263.1900
      • 25:$274.4700
      • 1:$295.5800
      6SD312EI-12-EB01-FS150R12KE3G
      DISTI # EB01-FS150R12KE
      Power IntegrationsPLUG-AND-PLAY IGBT DRIVER
      RoHS: Not Compliant
      0
      • 6:$346.8600
      • 10:$336.1900
      • 40:$311.1100
      FS150R12KE3GBOSA1
      DISTI # C1S322000680434
      Infineon Technologies AGTrans IGBT Module N-CH 1200V 200A 695000mW 29-Pin ECONOPP-1 Tray
      RoHS: Compliant
      8
      • 1:$379.9400
      Bild Teil # Beschreibung
      FS150R17KE3G

      Mfr.#: FS150R17KE3G

      OMO.#: OMO-FS150R17KE3G

      IGBT Modules 1700V 150A 3-PHASE
      FS150R07PE4BOSA1

      Mfr.#: FS150R07PE4BOSA1

      OMO.#: OMO-FS150R07PE4BOSA1-INFINEON-TECHNOLOGIES

      IGBT MODULE VCES 650V 150A
      FS150R12KT4B11

      Mfr.#: FS150R12KT4B11

      OMO.#: OMO-FS150R12KT4B11-1190

      Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
      FS150R12KT4BOSA1

      Mfr.#: FS150R12KT4BOSA1

      OMO.#: OMO-FS150R12KT4BOSA1-INFINEON-TECHNOLOGIES

      IGBT MODULE 1200V 150A
      FS150R17KE3GBOSA1

      Mfr.#: FS150R17KE3GBOSA1

      OMO.#: OMO-FS150R17KE3GBOSA1-INFINEON-TECHNOLOGIES

      MOD IGBT MED PWR ECONOPP-1
      FS150R12KE3G

      Mfr.#: FS150R12KE3G

      OMO.#: OMO-FS150R12KE3G-125

      IGBT Modules 1200V 150A 3-PHASE
      FS150R12KT4

      Mfr.#: FS150R12KT4

      OMO.#: OMO-FS150R12KT4-125

      IGBT Modules IGBT MODULE 1200V, 150A
      FS150R12KT4_B9

      Mfr.#: FS150R12KT4_B9

      OMO.#: OMO-FS150R12KT4-B9-125

      IGBT Modules IGBT Module 150A 1700V
      FS150R12KE3

      Mfr.#: FS150R12KE3

      OMO.#: OMO-FS150R12KE3-125

      IGBT Modules 1200V 150A FL BRIDGE
      FS150R12KT4PBPSA1

      Mfr.#: FS150R12KT4PBPSA1

      OMO.#: OMO-FS150R12KT4PBPSA1-INFINEON-TECHNOLOGIES

      MOD IGBT LOW PWR ECONO3-4
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von FS150R12KE3G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      419,13 $
      419,13 $
      10
      398,17 $
      3 981,74 $
      100
      377,22 $
      37 721,76 $
      500
      356,26 $
      178 130,55 $
      1000
      335,30 $
      335 304,50 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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