FS150R12KE3

Mfr. #:: FS150R12KE3
Hersteller:: Infineon Technologies
Beschreibung:: IGBT Modules 1200V 150A FL BRIDGE
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FS150R12KE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: EUPEC

Produktkategorie: IC-Chips

Produkt: IGBT Silizium Module

Verpackung: Tablett

Montageart: Schraube

Paket-Koffer: EconoPACK

Aufbau: Verhexen

Pd-Verlustleistung: 700 W

Maximale-Betriebstemperatur: + 125 C

Mindest-Betriebstemperatur: - 40 C

Kollektor-Emitter-Spannung-VCEO-Max: 1200 V

Kollektor-Emitter-Sättigungsspannung: 1.7 V

Kontinuierlicher Kollektorstrom-bei-25-C: 205 A

Gate-Emitter-Leckstrom: 400 nA

Maximale Gate-Emitter-Spannung: +/- 20 V

Tags: FS150R12KE, FS150R12K, FS150R12, FS150R1, FS150R, FS150, FS15, FS1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FS150R12KE3 Beschreibung

***omponent: IGBT-Module, IGBT Inverter Module, IGBT Standard/Power Modules. 150 A, 1200 V.

***ser: IGBT - Standard Modules 1200V,150A,FL BRIDGE

***nell: IGBT MODULE, 1200V, ECONOPACK2; Transistor type:3-Phase Bridge + NTC Thermistor; Voltage, Vces:1200V; Current, Ic continuous a max:150A; Voltage, Vce sat max:2.15V; Power dissipation:700W; Case style:Custom; Current, Icm pulsed:300A; Power, Pd:700W; Temperature, current:80°C; Temperature, full power rating:25°C; Termination Type:Solder; Transistors, No. of:6; Voltage, Vce sat typ:1.7V; Voltage, Vceo:1200V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FS150R12KE3BOSA1 DISTI # V99:2348_17558364	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 205A 35-Pin Tray RoHS: Compliant	10	1:$187.9500
FS150R12KE3GBOSA1 DISTI # V99:2348_18205074	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 200A 29-Pin Tray RoHS: Compliant	8	1:$242.1101
FS150R12KE3BOSA1 DISTI # V36:1790_17558364	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 205A 35-Pin Tray RoHS: Compliant	0
FS150R12KE3BOSA1 DISTI # FS150R12KE3BOSA1-ND	Infineon Technologies AG	IGBT MODULE 1200V 150A RoHS: Compliant Min Qty: 1 Container: Bulk	40In Stock	1:$187.4600
FS150R12KE3GBOSA1 DISTI # FS150R12KE3GBOSA1-ND	Infineon Technologies AG	MOD IGBT MED PWR ECONOPP-1 RoHS: Compliant Min Qty: 4 Container: Tray	Limited Supply - Call	4:$308.1850
EB01-FS150R12KE3G DISTI # EB01-FS150R12KE3G-ND	Power Integrations	MODULE GATE DVR P&P SCALE 1 RoHS: Compliant Container: Bulk	Limited Supply - Call
FS150R12KE3BOSA1 DISTI # 29029354	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 205A 35-Pin Tray RoHS: Compliant	10	1:$191.7300
FS150R12KE3GBOSA1 DISTI # 26198728	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 200A 29-Pin Tray RoHS: Compliant	8	1:$242.1101
FS150R12KE3BOSA1 DISTI # 28973325	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 205A 35-Pin Tray RoHS: Compliant	7	1:$185.5854
FS150R12KE3 DISTI # SP000100417	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 205A 13-pin ECONO3-4 (Alt: SP000100417) RoHS: Compliant Min Qty: 1	Europe - 103	1000:€155.7900 500:€159.3900 100:€164.0900 50:€169.6900 25:€175.6900 10:€193.2900 1:€239.0900
FS150R12KE3 DISTI # SP000100417	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 205A 13-pin ECONO3-4 (Alt: SP000100417) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€149.5900 500:€154.6900 100:€160.2900 50:€166.1900 25:€172.5900 10:€179.4900 1:€186.9900
FS150R12KE3G DISTI # SP000100403	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 200A 28-pin ECONOPP-1 (Alt: SP000100403) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€245.8900 500:€254.3900 100:€263.4900 50:€273.1900 25:€283.7900 10:€295.0900 1:€307.3900
FS150R12KE3BOSA1 DISTI # FS150R12KE3BOSA1	Infineon Technologies AG	LOW POWER ECONO - Trays (Alt: FS150R12KE3BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	100:$158.9900 60:$162.8900 40:$167.0900 20:$171.3900 10:$173.6900
FS150R12KE3GBOSA1 DISTI # FS150R12KE3GBOSA1	Infineon Technologies AG	MEDIUM POWER ECONO - Bulk (Alt: FS150R12KE3GBOSA1) Min Qty: 2 Container: Bulk	Americas - 0	20:$257.2900 10:$261.9900 6:$271.0900 4:$281.2900 2:$291.7900
FS150R12KE3GBOSA1 DISTI # FS150R12KE3GBOSA1	Infineon Technologies AG	MEDIUM POWER ECONO - Trays (Alt: FS150R12KE3GBOSA1) RoHS: Compliant Min Qty: 4 Container: Tray	Americas - 0	40:$261.3900 24:$267.8900 16:$274.6900 8:$281.7900 4:$285.4900
FS150R12KE3BOSA1 DISTI # 13AC8748	Infineon Technologies AG	TRANSISTOR, IGBT MODULE, 1.2KV, 200A,Transistor Polarity:N Channel,DC Collector Current:200A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:700W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes	18	1:$189.3300
FS150R12KE3 DISTI # 641-FS150R12KE3	Infineon Technologies AG	IGBT Modules 1200V 150A FL BRIDGE RoHS: Compliant	120	1:$191.4000 5:$186.8000 10:$182.1600 25:$179.6000
FS150R12KE3G DISTI # 641-FS150R12KE3G	Infineon Technologies AG	IGBT Modules 1200V 150A 3-PHASE RoHS: Not compliant	4	1:$314.6700 5:$307.1000 10:$299.4700 25:$295.2800
EB01-FS150R12KE3G DISTI # 869-EB01-FS150R12KE3	Power Integrations	Power Management IC Development Tools IGBT Driver HVIC PI Gate Driver ONLY RoHS: Not compliant	0	1:$78.3300
FS150R12KE3GBOSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	4	1000:$266.5300 500:$280.5500 100:$292.0800 25:$304.6000 1:$328.0300
FS150R12KE3BOSA1 DISTI # 1116090	Infineon Technologies AG	3-PHASE IGBT MODULE + NTC 1200V 150A, EA	45	10:£144.4600 7:£148.1700 5:£152.0700 3:£156.1800 1:£160.5100
FS150R12KE3BOSA1 DISTI # 2726177	Infineon Technologies AG	TRANSISTOR, IGBT MODULE, 1.2KV, 200A RoHS: Compliant	18	1:$298.1400
FS150R12KE3BOSA1 DISTI # 2726177	Infineon Technologies AG	TRANSISTOR, IGBT MODULE, 1.2KV, 200A	20	10:£143.0000 5:£146.0000 1:£149.0000
FS150R12KE3 DISTI # XSKDRABV0030461	Infineon Technologies AG	RoHS: Compliant	43 in Stock0 on Order	43:$284.4360 10:$304.7520
6SD312EI-12-EB01-FS150R12KE3G DISTI # EB01-FS150R12KE	Power Integrations	PLUG-AND-PLAY IGBT DRIVER RoHS: Not Compliant	0
FS150R12KE3BOSA1 DISTI # FS150R12KE3	Infineon Technologies AG	IGBT-Sixpack 1200V 200A ECONO3-4 RoHS: Compliant	5	1:€154.3500 3:€144.3500 10:€139.3500 20:€134.1500

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: FS150R07N3E4 OMO.#: OMO-FS150R07N3E4	IGBT Modules IGBT Module 150A 650V
	Mfr.#: FS150R12KT4_B11 OMO.#: OMO-FS150R12KT4-B11	IGBT Modules N-CH 1.2KV 150A
	Mfr.#: FS150R12KT4 OMO.#: OMO-FS150R12KT4	IGBT Modules IGBT MODULE 1200V, 150A
	Mfr.#: FS150R06KL4 OMO.#: OMO-FS150R06KL4-1190	Neu und Original
	Mfr.#: FS150R06KL4-B4 OMO.#: OMO-FS150R06KL4-B4-1190	Neu und Original
	Mfr.#: FS150R07N3E4-B11 OMO.#: OMO-FS150R07N3E4-B11-1190	Neu und Original
	Mfr.#: FS150R12KT4-B11 OMO.#: OMO-FS150R12KT4-B11-1190	Neu und Original
	Mfr.#: FS150R17KE3GBOSA1 OMO.#: OMO-FS150R17KE3GBOSA1-INFINEON-TECHNOLOGIES	MOD IGBT MED PWR ECONOPP-1
	Mfr.#: FS150R17PE4BOSA1 OMO.#: OMO-FS150R17PE4BOSA1-INFINEON-TECHNOLOGIES	IGBT MODULE VCES 650V 150A
	Mfr.#: FS150R07N3E4 OMO.#: OMO-FS150R07N3E4-125	IGBT Modules IGBT Module 150A 650V

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4500
Menge eingeben:

Der aktuelle Preis von FS150R12KE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~254,98 $~~; ~~254,98 $~~

10: ~~242,23 $~~; ~~2 422,34 $~~

100: ~~229,48 $~~; ~~22 948,47 $~~

500: ~~216,74 $~~; ~~108 367,75 $~~

1000: ~~203,99 $~~; ~~203 986,40 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

FS150R12KE 5
FS150R12K 21
FS150R12 25
FS150R1 34
FS150R 45
FS150 55
FS15 90
FS1 914

Neueste Produkte

BCR601 - Linear LED IC with Active Headroom Contro

Infineon's BCR601 is a linear LED controller IC regulating the LED current with an external driver transistor.
Compare FS150R12KE3

FS150R12KE3 vs FS150R12KE3BOSA1 vs FS150R12KE3ENG
BCR602 - Linear LED IC Controller

Infineon's BCR602 is a linear LED controller IC regulating the LED current by means of an external driver transistor.
600V Trench IGBTs

International Rectifier's 40 A IRGP4640D, 50A IRGP4650D and 60A IRGP4660d IGBTs utilize trench thin wafer technology to offer lower conduction and switching losses.
800 V CoolMOS™ P7 Power Transistors

Infineon's 800 V CoolMOS™ P7 series set a benchmark in 800 V super junction technologies by combining best-in-class performance with state-of-the-art usability.
OptiMOS™-5 40 V MOSFETs in SS08

Infineon’s OptiMOS™-5 40 V in SS08 is the little MOSFET that enables big current.

More Newest Products

FS150R12KE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes