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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGT1S7N60A4DS9A DISTI # HGT1S7N60A4DS9A | ON Semiconductor | 600V, SMPS Series N-channel Igbt Wirth Parallel Hyperfast Diode - Bulk (Alt: HGT1S7N60A4DS9A) RoHS: Not Compliant Min Qty: 463 Container: Bulk | Americas - 0 |
|
| HGT1S7N60A4DS9A | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Not Compliant | 83073 |
|
| HGT1S7N60A4DS9A | Fairchild Semiconductor Corporation | RoHS: Compliant | Americas - 281600 | |
| HGT1S7N60A4DS9A | 2311 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: HGT1S7N60A4 OMO.#: OMO-HGT1S7N60A4-1190 |
Neu und Original |
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Mfr.#: HGT1S7N60A40S OMO.#: OMO-HGT1S7N60A40S-1190 |
Neu und Original |
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Mfr.#: HGT1S7N60A4DS |
IGBT 600V 34A 125W TO263AB |
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Mfr.#: HGT1S7N60A4DS,G7N60A4D |
Neu und Original |
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Mfr.#: HGT1S7N60A4DS9A OMO.#: OMO-HGT1S7N60A4DS9A-1190 |
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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Mfr.#: HGT1S7N60A4S OMO.#: OMO-HGT1S7N60A4S-1190 |
Neu und Original |
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Mfr.#: HGT1S7N60A4S9A OMO.#: OMO-HGT1S7N60A4S9A-1190 |
IGBT Transistors 600V N-Channel IGBT SMPS Series |