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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGT1S7N60A4DS DISTI # HGT1S7N60A4DS-ND | ON Semiconductor | IGBT 600V 34A 125W TO263AB Min Qty: 400 Container: Tube | Limited Supply - Call | |
| HGT1S7N60A4DS DISTI # HGT1S7N60A4DS | ON Semiconductor | TRANS IGBT CHIP N-CH 600V 34A 3PIN TO-263AB - Bulk (Alt: HGT1S7N60A4DS) RoHS: Compliant Min Qty: 264 Container: Bulk | Americas - 0 |
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| HGT1S7N60A4DS9A DISTI # HGT1S7N60A4DS9A | ON Semiconductor | 600V, SMPS Series N-channel Igbt Wirth Parallel Hyperfast Diode - Bulk (Alt: HGT1S7N60A4DS9A) RoHS: Not Compliant Min Qty: 463 Container: Bulk | Americas - 0 |
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| HGT1S7N60A4DS | Fairchild Semiconductor | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant | 912 |
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| HGT1S7N60A4DS9A | Fairchild Semiconductor | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Not Compliant | 64673 |
|
| HGT1S7N60A4DS9A | fsc | RoHS: Compliant | Americas - 281600 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: HGT1S7N60A4 OMO.#: OMO-HGT1S7N60A4-1190 |
Neu und Original |
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Mfr.#: HGT1S7N60A4DS,G7N60A4D |
Neu und Original |
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Mfr.#: HGT1S7N60A4DS9A OMO.#: OMO-HGT1S7N60A4DS9A-1190 |
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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Mfr.#: HGT1S7N60A4S9A OMO.#: OMO-HGT1S7N60A4S9A-1190 |
IGBT Transistors 600V N-Channel IGBT SMPS Series |
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Mfr.#: HGT1S7N60B3D OMO.#: OMO-HGT1S7N60B3D-1190 |
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA |
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Mfr.#: HGT1S7N60B3DS OMO.#: OMO-HGT1S7N60B3DS-1190 |
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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Mfr.#: HGT1S7N60B3DS9A OMO.#: OMO-HGT1S7N60B3DS9A-1190 |
IGBT Transistors 14A 600V UFS N-Ch |
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Mfr.#: HGT1S7N60B3S OMO.#: OMO-HGT1S7N60B3S-1190 |
Neu und Original |
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Mfr.#: HGT1S7N60C3D OMO.#: OMO-HGT1S7N60C3D-1190 |
IGBT Transistors Optocoupler Phototransisto |
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Mfr.#: HGT1S7N60C3DS |
IGBT 600V 14A 60W TO263AB |