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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGT1S7N60B3DS | Harris Semiconductor | 14 A, 600 V, UFS N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE RoHS: Not Compliant | 1150 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: HGT1S7N60C3DS9A OMO.#: OMO-HGT1S7N60C3DS9A |
IGBT Transistors 14a 600V N-Ch IGBT UFS Series |
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Mfr.#: HGT1S7N60C3DS OMO.#: OMO-HGT1S7N60C3DS |
IGBT Transistors 7A 600V TF=275NS |
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Mfr.#: HGT1S7N60A4 OMO.#: OMO-HGT1S7N60A4-1190 |
Neu und Original |
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Mfr.#: HGT1S7N60A40S OMO.#: OMO-HGT1S7N60A40S-1190 |
Neu und Original |
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Mfr.#: HGT1S7N60A4DS9A OMO.#: OMO-HGT1S7N60A4DS9A-1190 |
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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Mfr.#: HGT1S7N60A4S OMO.#: OMO-HGT1S7N60A4S-1190 |
Neu und Original |
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Mfr.#: HGT1S7N60B3 OMO.#: OMO-HGT1S7N60B3-1190 |
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA |
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Mfr.#: HGT1S7N60B3D OMO.#: OMO-HGT1S7N60B3D-1190 |
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA |
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Mfr.#: HGT1S7N60B3DS OMO.#: OMO-HGT1S7N60B3DS-1190 |
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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Mfr.#: HGT1S7N60C3DS |
IGBT 600V 14A 60W TO263AB |