HGT1S7N60C3DS9A

HGT1S7N60C3DS9A
Mfr. #:
HGT1S7N60C3DS9A
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors 14a 600V N-Ch IGBT UFS Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGT1S7N60C3DS9A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
E
Technologie:
Si
Paket / Koffer:
TO-263AB-3
Montageart:
SMD/SMT
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.6 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
14 A
Pd - Verlustleistung:
60 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Spule
Kontinuierlicher Kollektorstrom Ic Max:
14 A
Höhe:
4.83 mm
Länge:
10.67 mm
Breite:
9.65 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
14 A
Gate-Emitter-Leckstrom:
+/- 250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
800
Unterkategorie:
IGBTs
Teil # Aliase:
HGT1S7N60C3DS9A_NL
Gewichtseinheit:
0.056438 oz
Tags
HGT1S7N60C, HGT1S7, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 14A 3-Pin(2+Tab) D2PAK T/R
***ser
IGBTs 14a, 600V, N-Ch IGBT UFS Series
***i-Key
IGBT 600V 14A 60W TO263AB
Teil # Mfg. Beschreibung Aktie Preis
HGT1S7N60C3DS9A
DISTI # HGT1S7N60C3DS9A-ND
ON SemiconductorIGBT 600V 14A 60W TO263AB
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Limited Supply - Call
    HGT1S7N60C3DS9A
    DISTI # 512-HGT1S7N60C3DS9A
    ON SemiconductorIGBT Transistors 14a 600V N-Ch IGBT UFS Series
    RoHS: Compliant
    0
      HGT1S7N60C3DS9AHarris SemiconductorInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      RoHS: Compliant
      25600
      • 1000:$2.0700
      • 500:$2.1800
      • 100:$2.2600
      • 25:$2.3600
      • 1:$2.5400
      Bild Teil # Beschreibung
      HGT1S7N60C3DS

      Mfr.#: HGT1S7N60C3DS

      OMO.#: OMO-HGT1S7N60C3DS

      IGBT Transistors 7A 600V TF=275NS
      HGT1S7N60A4

      Mfr.#: HGT1S7N60A4

      OMO.#: OMO-HGT1S7N60A4-1190

      Neu und Original
      HGT1S7N60A40S

      Mfr.#: HGT1S7N60A40S

      OMO.#: OMO-HGT1S7N60A40S-1190

      Neu und Original
      HGT1S7N60A4DS,G7N60A4D

      Mfr.#: HGT1S7N60A4DS,G7N60A4D

      OMO.#: OMO-HGT1S7N60A4DS-G7N60A4D-1190

      Neu und Original
      HGT1S7N60A4S

      Mfr.#: HGT1S7N60A4S

      OMO.#: OMO-HGT1S7N60A4S-1190

      Neu und Original
      HGT1S7N60A4S9A

      Mfr.#: HGT1S7N60A4S9A

      OMO.#: OMO-HGT1S7N60A4S9A-1190

      IGBT Transistors 600V N-Channel IGBT SMPS Series
      HGT1S7N60B3

      Mfr.#: HGT1S7N60B3

      OMO.#: OMO-HGT1S7N60B3-1190

      Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
      HGT1S7N60B3D

      Mfr.#: HGT1S7N60B3D

      OMO.#: OMO-HGT1S7N60B3D-1190

      Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
      HGT1S7N60B3S

      Mfr.#: HGT1S7N60B3S

      OMO.#: OMO-HGT1S7N60B3S-1190

      Neu und Original
      HGT1S7N60C3D

      Mfr.#: HGT1S7N60C3D

      OMO.#: OMO-HGT1S7N60C3D-1190

      IGBT Transistors Optocoupler Phototransisto
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2500
      Menge eingeben:
      Der aktuelle Preis von HGT1S7N60C3DS9A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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