HGT1S7N60B3D

HGT1S7N60B3D
Mfr. #:
HGT1S7N60B3D
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGT1S7N60B3D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
FSC
Produktkategorie
IC-Chips
Tags
HGT1S7N60B3D, HGT1S7N60B, HGT1S7, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***or
14A, 600V, N-CHANNEL IGBT
Teil # Mfg. Beschreibung Aktie Preis
HGT1S7N60B3DHarris SemiconductorInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
RoHS: Not Compliant
400
  • 1000:$1.0700
  • 500:$1.1200
  • 100:$1.1700
  • 25:$1.2200
  • 1:$1.3100
HGT1S7N60B3DSHarris Semiconductor 
RoHS: Not Compliant
1150
  • 1000:$1.0800
  • 500:$1.1400
  • 100:$1.1800
  • 25:$1.2300
  • 1:$1.3300
HGT1S7N60B3DS9A
DISTI # 512-HGT1S7N60B3DS9A
ON SemiconductorIGBT Transistors 14A 600V UFS N-Ch
RoHS: Not compliant
0
    Bild Teil # Beschreibung
    HGT1S7N60C3DS9A

    Mfr.#: HGT1S7N60C3DS9A

    OMO.#: OMO-HGT1S7N60C3DS9A

    IGBT Transistors 14a 600V N-Ch IGBT UFS Series
    HGT1S7N60A4

    Mfr.#: HGT1S7N60A4

    OMO.#: OMO-HGT1S7N60A4-1190

    Neu und Original
    HGT1S7N60A40S

    Mfr.#: HGT1S7N60A40S

    OMO.#: OMO-HGT1S7N60A40S-1190

    Neu und Original
    HGT1S7N60A4DS,G7N60A4D

    Mfr.#: HGT1S7N60A4DS,G7N60A4D

    OMO.#: OMO-HGT1S7N60A4DS-G7N60A4D-1190

    Neu und Original
    HGT1S7N60A4DS9A

    Mfr.#: HGT1S7N60A4DS9A

    OMO.#: OMO-HGT1S7N60A4DS9A-1190

    Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    HGT1S7N60A4S

    Mfr.#: HGT1S7N60A4S

    OMO.#: OMO-HGT1S7N60A4S-1190

    Neu und Original
    HGT1S7N60B3

    Mfr.#: HGT1S7N60B3

    OMO.#: OMO-HGT1S7N60B3-1190

    Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
    HGT1S7N60B3DS9A

    Mfr.#: HGT1S7N60B3DS9A

    OMO.#: OMO-HGT1S7N60B3DS9A-1190

    IGBT Transistors 14A 600V UFS N-Ch
    HGT1S7N60B3S

    Mfr.#: HGT1S7N60B3S

    OMO.#: OMO-HGT1S7N60B3S-1190

    Neu und Original
    HGT1S7N60C3D

    Mfr.#: HGT1S7N60C3D

    OMO.#: OMO-HGT1S7N60C3D-1190

    IGBT Transistors Optocoupler Phototransisto
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von HGT1S7N60B3D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,60 $
    1,60 $
    10
    1,52 $
    15,25 $
    100
    1,44 $
    144,45 $
    500
    1,36 $
    682,15 $
    1000
    1,28 $
    1 284,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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