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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGT1S7N60B3DS9A DISTI # 512-HGT1S7N60B3DS9A | ON Semiconductor | IGBT Transistors 14A 600V UFS N-Ch RoHS: Not compliant | 0 | |
| HGT1S7N60B3 | Harris Semiconductor | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA RoHS: Not Compliant | 400 |
|
| HGT1S7N60B3D | Harris Semiconductor | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA RoHS: Not Compliant | 400 |
|
| HGT1S7N60B3DS | Harris Semiconductor | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Not Compliant | 1150 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: HGT1S12N60B3S OMO.#: OMO-HGT1S12N60B3S-1190 |
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
|
|
Mfr.#: HGT1S12N60C3DS OMO.#: OMO-HGT1S12N60C3DS-37 |
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes - Bulk (Alt: HGT1S12N60C3DS) |
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|
Mfr.#: HGT1S15N120C3S OMO.#: OMO-HGT1S15N120C3S-1190 |
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB |
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Mfr.#: HGT1S20N35G3VL OMO.#: OMO-HGT1S20N35G3VL-1190 |
Neu und Original |
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Mfr.#: HGT1S20N60C3R OMO.#: OMO-HGT1S20N60C3R-1190 |
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-262AA |
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Mfr.#: HGT1S5N120CNDS OMO.#: OMO-HGT1S5N120CNDS-1190 |
Neu und Original |
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Mfr.#: HGT1S7N60A40S OMO.#: OMO-HGT1S7N60A40S-1190 |
Neu und Original |
|
Mfr.#: HGT1S7N60A4DS |
IGBT 600V 34A 125W TO263AB |
|
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Mfr.#: HGT1S7N60B3 OMO.#: OMO-HGT1S7N60B3-1190 |
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA |
|
|
Mfr.#: HGT1S7N60B3DS9A OMO.#: OMO-HGT1S7N60B3DS9A-1190 |
IGBT Transistors 14A 600V UFS N-Ch |
