HGT1S7N60A4S9A

HGT1S7N60A4S9A
Mfr. #:
HGT1S7N60A4S9A
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 600V N-Channel IGBT SMPS Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGT1S7N60A4S9A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGT1S7N60A, HGT1S7, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
HGT1S7N60A4S9A
DISTI # 512-HGT1S7N60A4S9A
ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
RoHS: Compliant
0
    Bild Teil # Beschreibung
    HGT1S7N60C3DS9A

    Mfr.#: HGT1S7N60C3DS9A

    OMO.#: OMO-HGT1S7N60C3DS9A

    IGBT Transistors 14a 600V N-Ch IGBT UFS Series
    HGT1S7N60C3DS

    Mfr.#: HGT1S7N60C3DS

    OMO.#: OMO-HGT1S7N60C3DS

    IGBT Transistors 7A 600V TF=275NS
    HGT1S7N60A40S

    Mfr.#: HGT1S7N60A40S

    OMO.#: OMO-HGT1S7N60A40S-1190

    Neu und Original
    HGT1S7N60A4DS,G7N60A4D

    Mfr.#: HGT1S7N60A4DS,G7N60A4D

    OMO.#: OMO-HGT1S7N60A4DS-G7N60A4D-1190

    Neu und Original
    HGT1S7N60A4DS9A

    Mfr.#: HGT1S7N60A4DS9A

    OMO.#: OMO-HGT1S7N60A4DS9A-1190

    Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    HGT1S7N60B3

    Mfr.#: HGT1S7N60B3

    OMO.#: OMO-HGT1S7N60B3-1190

    Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
    HGT1S7N60B3D

    Mfr.#: HGT1S7N60B3D

    OMO.#: OMO-HGT1S7N60B3D-1190

    Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
    HGT1S7N60B3DS

    Mfr.#: HGT1S7N60B3DS

    OMO.#: OMO-HGT1S7N60B3DS-1190

    Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    HGT1S7N60B3S

    Mfr.#: HGT1S7N60B3S

    OMO.#: OMO-HGT1S7N60B3S-1190

    Neu und Original
    HGT1S7N60C3DS9A

    Mfr.#: HGT1S7N60C3DS9A

    OMO.#: OMO-HGT1S7N60C3DS9A-ON-SEMICONDUCTOR

    IGBT 600V 14A 60W TO263AB
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von HGT1S7N60A4S9A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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