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HGT1S7N60C3DS9A

HGT1S7N60C3DS9A
Mfr. #:
HGT1S7N60C3DS9A
Hersteller:
ON Semiconductor
Beschreibung:
IGBT 600V 14A 60W TO263AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGT1S7N60C3DS9A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGT1S7N60C, HGT1S7, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 14A 3-Pin(2+Tab) D2PAK T/R
***ser
IGBTs 14a, 600V, N-Ch IGBT UFS Series
***i-Key
IGBT 600V 14A 60W TO263AB
Teil # Mfg. Beschreibung Aktie Preis
HGT1S7N60C3DS9A
DISTI # HGT1S7N60C3DS9A-ND		ON SemiconductorIGBT 600V 14A 60W TO263AB
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Limited Supply - Call
    HGT1S7N60C3DS9A
    DISTI # 512-HGT1S7N60C3DS9A    		ON SemiconductorIGBT Transistors 14a 600V N-Ch IGBT UFS Series
    RoHS: Compliant    		0
      HGT1S7N60C3DS9AHarris SemiconductorInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      RoHS: Compliant      		25600
      • 1000:$2.0700
      • 500:$2.1800
      • 100:$2.2600
      • 25:$2.3600
      • 1:$2.5400
      Bild Teil # Beschreibung
      HGT1S7N60C3DS9A

      Mfr.#: HGT1S7N60C3DS9A

      OMO.#: OMO-HGT1S7N60C3DS9A

      		 IGBT Transistors 14a 600V N-Ch IGBT UFS Series
      HGT1S7N60A4

      Mfr.#: HGT1S7N60A4

      OMO.#: OMO-HGT1S7N60A4-1190

      		 Neu und Original
      HGT1S7N60A40S

      Mfr.#: HGT1S7N60A40S

      OMO.#: OMO-HGT1S7N60A40S-1190

      		 Neu und Original
      HGT1S7N60A4DS

      Mfr.#: HGT1S7N60A4DS

      OMO.#: OMO-HGT1S7N60A4DS-ON-SEMICONDUCTOR

      		 IGBT 600V 34A 125W TO263AB
      HGT1S7N60B3

      Mfr.#: HGT1S7N60B3

      OMO.#: OMO-HGT1S7N60B3-1190

      		 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
      HGT1S7N60B3D

      Mfr.#: HGT1S7N60B3D

      OMO.#: OMO-HGT1S7N60B3D-1190

      		 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
      HGT1S7N60B3DS

      Mfr.#: HGT1S7N60B3DS

      OMO.#: OMO-HGT1S7N60B3DS-1190

      		 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      HGT1S7N60B3S

      Mfr.#: HGT1S7N60B3S

      OMO.#: OMO-HGT1S7N60B3S-1190

      		 Neu und Original
      HGT1S7N60C3D

      Mfr.#: HGT1S7N60C3D

      OMO.#: OMO-HGT1S7N60C3D-1190

      		 IGBT Transistors Optocoupler Phototransisto
      HGT1S7N60C3DS9A

      Mfr.#: HGT1S7N60C3DS9A

      OMO.#: OMO-HGT1S7N60C3DS9A-ON-SEMICONDUCTOR

      		 IGBT 600V 14A 60W TO263AB
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von HGT1S7N60C3DS9A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
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      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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